|
Papers in Refereed Journals
|
|
2012
2011
|
2010
|
|
Comparison
of
compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP
substrate, M. J. Mori, S. T. Boles, and E. A. Fitzgerald, J. Vac. Sci.
Tech. A, vol. 28, pp. 182, 14 January 2010. [477 KB, 7 Pages] |
|
|
|
Improved
interfacial state density in Al2O3 /GaAs
interfaces using metal-organic chemical vapor deposition, C. Cheng,
E. A. Fitzgerald, Appl. Phys. Lett.,
vol. 96, pp. 202101, 17 May 2010. [340 KB, 3 Pages]
|
|
|
|
Free-standing
AlxGa1−xAs heterostructures by gas-phase
etchingof germanium, G. D. Cole, Y. Bai, M. Aspelmeyer, E. A.
Fitzgerald, Appl. Phys. Lett.,
vol. 96, pp. 261102, 28 June 2010. [1382 KB, 3 Pages]
|
|
|
|
High
Quality Epitaxial Growth of GaAsyP1-y
Alloys on Si1-xGex Virtual Substrates,
P. Sharma, M. T. Bulsara, and E. A. Fitzgerald, ECS Transactions, vol.
33, pp. 843, October 2010. [819 KB, 6 Pages]
|
|
|
|
Ge/III-V
Heterostructures and Their Applications in Fabricating Engineered
Substrates, Y. Bai and E. A. Fitzgerald, ECS Transactions, vol. 33,
pp. 927, October 2010. [203 KB, 6 Pages] |
|
2009
|
|
Catalyst
proximity
effects
on
the growth rate of Si nanowires, S. T. Boles, E. A.
Fitzgerald, C. V. Thompson, C. K. F. Ho and K. L. Pey, J. Appl. Phys.,
vol. 106, pp. 044311, 15 August 2009. [855 KB, 9
Pages]
|
|
|
|
Self-cleaning
and
surface
recovery
with arsine pretreatment in ex situ atomic-layer-deposition of
Al[sub 2]O[sub 3] on GaAs, C. Cheng, J. Hennessy, D. Antoniadis
and E. A. Fitzgerald, Appl. Phys. Lett., vol. 95, pp. 082106, 24 August
2009 [414 KB, 3
Pages]
|
|
|
|
Digital
metamorphic
alloys,
K.
E.
Lee
and
E.
A.
Fitzgerald,
J. Appl. Phys., vol. 106, pp. 074911, 1
October 2009 [725 KB, 12
Pages]
|
|
|
|
Thermal
considerations
for
advanced
SOI substrates designed for III-V/Si heterointegration,
N. Yang, M. T. Bulsara, E. A. Fitzgerald, W. K. Liu, D. Lubyshev, J. M.
Fastenau, Y. Wu, M. Urteaga, W. Ha, J. Bergman, B. Brar, C. Drazekd, N.
Daval, L. Benaissa, E. Augendre, W. E. Hoke, J. R. LaRoche, K. J.
Herrick and T. E. Kazior, SOI Conference, 2009 IEEE
International, pp. 1-2, 2009. [357 KB, 2
Pages]
|
|
|
|
|
|
2008
|
|
Growth
of
highly
tensile-strained
Ge on relaxed InxGa1-xAs by metal-organic chemical
vapor deposition, Yu Bai, Kenneth E. Lee, Chengwei Cheng, Minjoo L.
Lee, and Eugene A. Fitzgerald Journal of Applied Physics 104,
084518
(2008).
[860
KB,
9
Pages]
|
|
|
In
situ
metal-organic
chemical
vapor deposition atomic-layer deposition of aluminum oxide on
GaAs using trimethyaluminum and isopropanol precursors,
Cheng-Wei Cheng and Eugene A. Fitzgerald Appl. Phys. Lett. 93,
031902
(2008).
[406
KB,
3
Pages]
|
2007
|
|
Relaxed,
high-quality
InP
on
GaAs by using InGaAs and InGaP graded
buffers to avoid phase separation, Nathaniel J. Quitoriano and
Eugene A. Fitzgerald, Journal of Applied Physics 102
033511 (2007). [2.36MB, 17 pages] |
|
|
Alternative
slip
system
activation
in
lattice-mismatched
InP/InGaAs
interfaces, Nathaniel J. Quitoriano and Eugene A. Fitzgerald, Journal
of
Applied
Physics 101 073509 (2007). [1.00MB, 10 pages] |
|
|
Monolithic
CMOS-compatible
AlGaInP
visible
LED
arrays
on
silicon
on
lattice-engineered
substrates
(SOLES), Kamesh Chilukuri, Michael J
Mori, Carl L Dohrman, Eugene A Fitzgerald, Semiconductor Science
and Technology 22 29-34 (2007). [583K, 6 pages] |
|
|
Relaxed
graded
SiGe
donor
substrates incorporating hydrogen-gettering
and buried etch stop layers for strained silicon layer transfer
applications, Isaacson, David M. Pitera, Arthur J. Fitzgerald,
Eugene A. Journal of Applied Physics 101 n 1 (2007).
|
2006
|
|
Fabrication
of
silicon
on
lattice-engineered substrate (SOLES) as a
platform for monolithic integration of CMOS and optoelectronic devices,
Dohrman,
Carl
L.
Chilukuri,
Kamesh;
Isaacson,
David
M.;
Lee,
Minjoo
L.;
Fitzgerald,
Eugene A. Materials Science and Engineering B:
Solid-State Materials for Advanced Technology v 135, n 3,
Dec 15,(2006). |
|
|
Deviations
from
ideal
nucleation-limited
relaxation in high-Ge content
compositionally graded SiGe/Si, Isaacson, David M. Dohrman, Carl
L.; Fitzgerald, Eugene A.Journal of Vacuum Science and Technology B:
Microelectronics and Nanometer Structures v 24 n 6,
(2006). |
|
|
Microelectronically
fabricated
LiCoO2/SiO
2/polycrystalline-silicon
power
cells planarized by chemical mechanical polishing, Ariel,
Nava. Isaacson, David M. Fitzgerald, Eugene A.Journal of Vacuum
Science and Technology B: Microelectronics and Nanometer Structures
v 24 , n 2, March/April, (2006).
|
|
|
Challenges
in
epitaxial
growth
of SiGe buffers on Si (111), (110), and (112)
, Minjoo L. Lee, Dimitri A. Antoniadis, Eugene A. Fitzgerald, Thin
Solid Films 508 136-139 (2006). [225K, 4 pages] |
|
|
Strained-silicon
on
silicon
and
strained-silicon
on silicon-germanium on silicon by relaxed
buffer bonding, David M. Isaacson, Gianni Taraschi, Arthur J.
Pitera, Nava Ariel,
Thomas A. Langdo, and Eugene A. Fitzgerald, Journal of The
Electrochemical Society 153 (2), G134-G140 (2006). [778 K,
7 pages] |
2005
|
|
Lattice-mismatch
and
CMOS, Fitzgerald, E.A. 2005 International Semiconductor
Device Research Symposium, v 2005, 2005 International Semiconductor
Device Research Symposium, p 127-128, (2005). |
|
|
Improved
thermal stability and hole
mobilities in a strained-Si/strained-Si1-yGey/strained-Si
heterostructure
grown
on
a
relaxed
Si1-xGex buffer,
Saurabh Gupta, Minjoo L. Lee, David M. Isaacson and Eugene A.
Fitzgerald, Materials Science and Engineering B 124-125,
102
(2005).
[277
K,
5
pages] |
|
|
Hydrogen
gettering and strain-induced
platelet nucleation in tensilely strained Si0.4Ge0.6/Ge
for
layer
exfoliation
applications,
Arthur J. Pitera and E. A. Fitzgerald, Journal of Applied Physics
97,
104511 (2005). [993 K, 11 pages] |
|
|
Electrochemically
controlled
transport
of
lithium through ultrathin SiO2,
N. Ariel, G. Ceder, D. Sadoway, E. A. Fitzgerald, Journal of
Applied Physics 98,
023516 (2005). [351 K, 7 pages] |
|
|
Improved
hole mobilities and thermal stability in a strained-Si/strained-Si1-yGey/strained-Si
heterostructure
grown
on
a
relaxed
Si1-xGex buffer,
S. Gupta, M. L. Lee, E. A. Fitzgerald, Applied Physics Letters 86,
192104
(2005).
[105
K,
3
pages] |
|
|
Strained
Si,
SiGe,
and
Ge channels for high-mobility metal-oxide-semiconductor
field-effect
transistors, M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M.
T. Currie, A. Lochtefeld, Journal of Applied Physics 97
(1),
011101 (2005). [558 K, 28 pages] |
2004
|
|
Strained
Si,
SiGe,
and
Ge on-insulator: review of wafer bonding fabrication
techniques,
G. Taraschi, A. J. Pitera, and E. A. Fitzgerald, Solid-State
Electronics 48,
1297 (2004). [477 K, 9 pages] |
|
|
Hole
mobility
enhancement
in
strained-Si/strained-SiGe heterostructure
p-MOSFETs
fabricated on SiGe-on-insulator (SGOI), Z. Cheng, J. Jung, M.
L. Lee, A. J. Pitera, J. L. Hoyt, D. A. Antoniadis, and E. A.
Fitzgerald, Semicond.
Sci. Technol. 19, L48 (2004). [81 K, 4 pages] |
|
|
Yellow-green
strained-InGaP
quantum-well
epitaxial-transparent-substrate
light emitting diodes,
L. McGill, J. W. Wu, and E. A. Fitzgerald, Journal of Applied
Physics 95 (12), 7561 (2004). [539 K, 6 pages]
|
|
|
Coplanar
integration
of
lattice-mismatched
semiconductors with silicon by wafer bonding Ge/Si1–xGex/Si
virtual
substrates, A. J. Pitera, G. Taraschi, M. L. Lee, C. W.
Leitz, Z.Y. Cheng, and E. A. Fitzgerald, Journal of the
Electrochemical Society 151 (7), G443 (2004). [664 K, 5
pages] |
|
|
Electron
mobility
characteristics
of
n-channel metal-oxide-semiconductor
field-effect transistors fabricated on Ge-rich single- and dual-channel
SiGe heterostructures, M.L. Lee and E. A. Fitzgerald, Journal
of Applied Physics 95 (3), 1550 (2004). [112 K, 6 pages]
|
|
|
Growth
of
strained
Si
and strained Ge heterostructures on relaxed Si1–xGex
by ultrahigh vacuum chemical vapor deposition, M.L. Lee, A. J.
Pitera, and E. A. Fitzgerald, Journal of Vacuum Science &
Technology B 22 (1), 158 (2004). [328 K, 7 pages]
|
|
|
Ultrathin
strained
Si-on-insulator
and
SiGe-on-insulator created using low temperature
wafer bonding and metastable stop layers,
G. Taraschi, A. J. Pitera, L. M. McGill, Z. Cheng, M.L. Lee, T. A.
Langdo, and E. A. Fitzgerald, Journal of the Electrochemical Society 151
(1), G47-56 (2004). [1350 K, 10 pages] |
2003
|
|
SiGe-free
strained
Si
on
insulator by wafer bonding and layer transfer, T. A. Langdo, M
T. Currie, A. Lochtefeld, R. Hammond, J. A. Carlin, M. Erdtmann, G.
Braithwaite, V. K. Yang, C. J. Vineis, H. Badawi, and M. T. Bulsara, Applied
Physics
Letters
82, 4256 (2003). [116 K, 3 pages]
|
|
|
Strained
Si/strained
Ge
dual-channel
heterostructures on relaxed Si0.5Ge0.5
for symmetric mobility p-type and n-type
metal-oxide-semiconductor field-effect transistors, M.L. Lee and E.
A. Fitzgerald, Applied Physics Letters 83 (20), 4202
(2003). [192 K, 3 pages] |
|
|
Comparison
of
luminescent
efficiency
of InGaAs quantum well structures grown on Si,
GaAs, Ge, and SiGe virtual substrate, V. K. Yang, S. M. Ting, M. E.
Groenert, M. T. Bulsara, M. T. Currie, C. W. Leitz, and Eugene A.
Fitzgerald, Journal of Applied Physics 93, 5095 (2003).
[324 K, 8 pages] |
|
|
Nanostructure
and
infrared
photoluminescence
of nanocrystalline Ge formed by reduction of
Si0.75Ge0.25O2/Si0.75Ge0.25
using various H2 pressures, Gianni Tarschi, Sajan Saini, Wendy W. Fan,
Lionel C. Kimerling, and Eugene A. Fitzgerald, Journal of Applied
Physics 93, 9988.
[798 K, 3 pages] |
|
|
Crack
formation
in
GaAs
heteroepitaxial films on Si and SiGe virtual substrates, V. K.
Yang, M. E. Groenert, C. W. Leitz, A. J. Pitera, M. T. Currie, and
Eugene A. Fitzgerald, Journal of Applied Physics 93,
3859 (2003). [345 K, 7 pages] |
|
|
Hole
mobility
enhancements
in
nanometer-scale strained-silicon heterostructures grown on Ge-rich
relaxed Si1-xGex, Minjoo L. Lee and Eugene A. Fitzgerald, Journal
of
Applied
Physics 94 2590 (2003). [193 K, 7
pages] |
|
|
Monolithic
integration
of
room-temperature
cw GaAs/AlGaAs lasers on Si substrates via relaxed
graded GeSi buffer layers, Michael E. Groenert, Christopher W. Leitz,
Arthur J. Pitera, and Vicky Yang, Journal of Applied Physics 93
362 (2003). [498 K, 6 pages] |
|
|
Strain
relaxation
in
graded
InGaN/GaN epilayers grown on sapphire, T. L. Song, S. J.
Chua, E. A. Fitzgerald, P. Chen, and S. Tripathy, Applied Physics
Letters 83, 1545 (2003). [58 K, 3 pages] |
|
|
Improved
room-temperature
continuous
wave
GaAs/AlGaAs and InGaAs/GaAs/AlGaAs
lasers fabricated on Si substrates via relaxed graded GexSi1-x
buffer layers, M. E. Groenert, A. J. Pitera, R. J. Ram, and E. A.
Fitzgerald, Journal of Vacuum Science and Technology B 21,
1064
(2003).
[540
K,
6
pages] |
|
|
Implementation
of
both
high-hole
and electron mobility in strained Si/strained Si1-yGey
on relaxed Si1-xGex (x<y) virtual substrate,
J.
Jung,
M.
L.
Lee,
S.
Yu,
E.
A.
Fitzgerald,
and
D. A. Antoniadis, IEEE
Electron
Device Letters 24, 460 (2003). [304 K, 3 pages]
|
|
|
Effect
of
rapid
thermal
annealing on strain in ultrathin strained silicon on insulator layers,
T.
S.
Drake,
C.
Ni
Chleirigh,
M.
L.
Lee,
A.
J.
Pitera, Eugene A.
Fitzgerald, Dimitri A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N.
Klymko, and J. L. Hoyt, Applied Physics Letters 83, 875
(2003). [314 K, 3 pages] |
|
|
Theoretical
analysis
of
Si1-x-yGexCy near-infrared
photodetectors, B. Li, S.-J. Chua, and Eugene A. Fitzgerald, Optical
Engineering
42, 1993 (2003). [160 K, 7 pages]
|
|
|
Influence
of
high
channel
doping
on
the
inversion
layer
electron
mobility
in
strained
silicon n-MOSFETs, H. M. Nayfeh, C. W. Leitz,
A. J. Pitera, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadis, IEEE
Electron
Device
Letters
24, 248 (2003). [297 K, 3 pages]
|
2002
|
|
Relaxed
SiGe-on-insulator
fabricated
via
wafer bonding and etch back,
Gianni Taraschi, Thomas A. Langdo, Matthew T. Currie, Eugene A.
Fitzgerald, and Dimitri A. Antoniadis, Journal of Vacuum Science
& Technology B 20, 725 (2002). [849 K, 3 pages]
|
|
|
Hole
mobility
enhancements
and
alloy scattering-limited mobility in tensile strained
Si/SiGe surface channel metal-oxide-semiconductor field-effect
transisitors, C. W. Leitz, TM. L. Lee, Z.-Y. Cheng, Dimitri A.
Antoniadis, and Eugene A. Fitzgerald, Journal of Applied
Physics 92, 3745 (2002). [99 K, 7 pages]
|
|
|
Monolithic
integration
of
III-V
optical interconnects on Si using SiGe virtual
substrates, V. K. Yang, M. E. Groenert, G. Taraschi, C. W. Leitz,
A. J. Pitera, M. T. Currie, Z. Cheng, and E. A. Fitzgerald, Journal
of Materials Science: Materials in Electronics 13, 377
(2002). [497 K, 4 pages]
|
|
|
Interfacial
reactions
of
Ni on Si1-xGex (x= 0.2, 0.3) at low temperature
by rapid thermal annealing, H. B. Zhao, K. L. Pey, W. K. Choi, S.
Chattopadhyay, E. A. Fitzgerald, D. A. Antoniadis, and P. S. Lee,
Journal of Applied Physics 92, 214 (2002). [163 K, 4 pages]
|
|
|
Comparison
of
arsenic
and phosphorus diffusion behavior in silicon-germanium alloys, S.
Eguchi, J. L. Hoyt, C. W. Leitz, and E. A. Fitzgerald, Applied
Physics Letters 80, 1743 (2002). [48 K, 3 pages]
|
|
|
Thermal
reaction
of
nickel
and Si0.75Ge0.25 alloy, K. L. Pey, W.
K. Choi, S. Chattopadhyay, H. B. Zhao, E. A. Fitzgerald, D. A.
Antoniadis, and P. S. Lee, Journal of Vacuum Science and Technology
A 20, 1903 (2002). [1193 K, 8 pages]
|
|
|
1x2
optical
waveguide
filters
based on multimode interference for 1.3- and
1.55-µm operation, B. Li, S.-J. Chua, C. W. Leitz, and Eugene
A. Fitzgerald, Optical Engineering 41, 723 (2002). [112
K, 5 pages]
|
|
|
Observation
of
memory
effect in germanium nanocrystals embedded in an amorphous silicon oxide
matrix of a metal-insulator-semiconductor structure, W. K. Choi, W.
K. Chim, C. L. Heng, L. W. Teo, V. Ho, V. Ng, D. A. Antoniadis, and E.
A. Fitzgerald, Applied Physics Letters 80, 2014 (2002).
[290 K, 3 pages]
|
2001
|
|
Relaxed
silicon-germanium
on
insulator substrate by layer transfer,
Zhiyuan Cheng, Gianni Taraschi, Matthew T. Currie, Chris W. Leitz,
Minjoo L. Lee, Arthur Pitera, Thomas A. Langdo, Judy L. Hoyt, Dimitri
A. Antoniadis, and Eugene A. Fitzgerald, Journal of Electronic
Materials 30, L37 (2001). [162 K, 3 pages]
|
|
|
Electron
Mobility
Enhancement
in Strained-Si n-MOSFETs Fabricated on SiGe-on-Insulator
(SGOI) Substrates, Zhiyuan Cheng, Matthew T. Currie, Chris
W. Leitz, Gianni Taraschi, Eugene A. Fitzgerald, Judy L. Hoyt, and
Dimitri A. Antoniadis, IEEE Electron Device Letters 22,
321 (2001). [130 K, 3 pages]
|
|
|
N2O
oxidation
of
strained-Si/relaxed-SiGe
heterostructure
grown
by
UHVCVD,
C. S. Tan, W. K. Choi, L. K. Bera, K. L. Pey, D. A. Antoniadis, E. A.
Fitzgerald, M. T. Currie, and C. K. Maiti, Solid-State Electronics 45,
1945 (2001). [186 K, 5 pages]
|
|
|
Dislocation
Glide
and
Blocking
Kinetics
in
Compositionally
Graded
SiGe/Si, C.W. Leitz, M.T. Currie, A.Y. Kim, J. Lai, E. Robbins,
E.A. Fitzgerald and M.T. Bulsara, Journal of Applied Physics 90,
2730
(2001).
[126
K,
7
pages] |
|
|
Strained
Ge
Channel
p-Type
Metal-Oxide-Semiconductor Field-Effect Transistors
Grown on Si1-xGex/Si Virtual Substrates, M.L.
Lee, C.W. Leitz, Z. Cheng, A.J. Pitera, T. Langdo, M.T. Currie, G.
Taraschi, D.A. Antoniadis, and E.A. Fitzgerald, Applied Physics
Letters 79, 3344 (2001). [176 K, 3 pages]
|
|
|
Hole
Mobility
Enhancements
in
Strained Si/Si1-yGey
p-Type Metal-Oxide-Semiconductor Field-Effect Transistors Grown on
Relaxed Si1-xGex (x<y)
Virtual
Substrates, C.W. Leitz, M.T. Currie, M.L. Lee, Z.-Y. Cheng,
D.A. Antoniadis, and E.A. Fitzgerald, Applied Physics Letters 79,
4246
(2001).
[96
K,
3
pages] |
|
|
Carrier
Mobilities
and
Process
Stability
of
Strained
Si
n-
and
p-MOSFETs
on
SiGe
Virtual Substrates, M.T. Currie, C.W. Leitz, T.A.
Langdo, G. Taraschi, D.A. Antoniadis, and E.A. Fitzgerald, Journal
of Vacuum Science and Technology B 19, 2268 (2001). [213 K,
12 pages] |
2000
|
|
Metal-organic
Chemical
Vapor
Deposition
of
Single
Domain
GaAs
on
Ge/GexSi1-x/Si
and
Ge
Substrates, S.M. Ting and E.A. Fitzgerald, Journal of
Applied Physics 85, 2618 (2000). [783 K, 11 pages]
|
|
|
Alternatives
to
Thick
MBE-grown
Relaxed
SiGe
Buffers, T. Hackbarth,
H.-J. Herzog, M. Zeuner, G. Hock, E.A. Fitzgerald, M. Bulsara, C.
Rosenblad, and H. von Kanel, Thin Solid Films 369, 148
(2000). [287 K, 4 pages] |
1999
|
|
Dislocation
Dynamics
in
Relaxed
Graded Composition Semiconductors, E. A. Fitzgerald, A. Y. Kim, M.
T. Currie, T. A. Langdo, G. Taraschi, and M. T. Bulsara, Materials
Science and Engineering B 67, 53 (1999). [265 K, 9 pages] |
|
|
Dislocations
in
Relaxed
SiGe/Si
Heterostructures, E. A. Fitzgerald,
M. T. Currie, S. B. Samavedam, T. A. Langdo, G. Taraschi, V. Yang, C.
W. Leitz and M. T. Bulsara, Physica Status Solidi A 171,
227
(1999).
[355
K,
12
pages] |
|
|
Evolution
of
Microstructure
and
Dislocation
Dynamics
in
InxGa1-xP
Graded
Buffers Grown on GaP by Metalorganic Vapor Phase Epitaxy:
Engineering Device-quality Substrate Materials, A. Y. Kim, W. S.
McCullough, E. A. Fitzgerald, Journal of Vacuum Science and
Technology B 17, 1485 (1999). [1198 K, 17 pages]
|
1998
|
|
Graded
InxGa1-xAs/GaAs 1.3 µm Wavelength Light
Emitting Diode Structures Grown with Molecular Beam Epitaxy, M.T.
Bulsara, V. Yang, A. Thilderkvist, and E.A. Fitzgerald, Journal of
Applied Physics 83, 592 (1998). [4939 K, 8 pages]
|
|
|
Relaxed
InxGa1-xAs Graded Buffers Grown with
Organometallic Vapor Phase Epitaxy on GaAs, Mayank T. Bulsara,
Chris Leitz, and Eugene A. Fitzgerald, Applied Physics Letters 72,
1608
(1998).
[1014
K,
3
pages] |
|
|
Controlling
Threading
Dislocation
Densities
in
Ge
on
Si
Using
Graded
SiGe
Layers
and
Chemical-Mechanical Polishing, M. T. Currie, S. B.
Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Applied
Physics Letters 72, 1718 (1998). [328 K, 3 pages]
|
|
|
Anti-Phase
Domain-Free
Growth
of
GaAs
on
Offcut
(001)
Ge
Wafers
by
Molecular
Beam
Epitaxy with Suppressed Ge Outdiffusion, R.M. Sieg,
S.A. Ringel, S.M. Ting, E.A. Fitzgerald, and R.N. Sacks, Journal of
Electronic Materials 27, 900 (1998). [516 K, 10 pages]
|
|
|
Scanning
Force
Microscopy
Studies
of GaAs Films Grown on Offcut Ge Substrates,
Q.
Xu,
J.W.P.
Hsu,
S.M.
Ting,
E.A.
Fitzgerald,
R.M. Sieg, and S.A.
Ringel, Journal of Electronic Materials 27, 1010
(1998). [3023 K, 9 pages] |
|
|
High-Quality
Germanium
Photodiodes
Integrated
on
Silicon
Substrates
Using
Optimized
Relaxed
Graded
Buffers, S. B. Samavedam, M. T.
Currie, T. A. Langdo, and E. A. Fitzgerald, Applied Physics Letters
73, 2125 (1998). [146 K, 3 pages]
|
1997
|
|
Novel
Dislocation
Structure
and
Surface
Morphology
Effects
in
Relaxed
Ge/Si-Ge(Graded)/Si
Structures., S.B. Samavedam and E.A.
Fitzgerald, Journal of Applied Physics 81, 3108 (1997).
[563 K, 9 pages] |
|
|
Influence
of
Strain
on
Semiconductor
Thin
Film
Epitaxy, E.A.
Fitzgerald, S. Samavedam, Y.H. Xie, and L.M. Giovane, Journal of
Vacuum Science and Technology A 15, 1048 (1997). [636 K, 9
pages] |
1994
|
|
Necessity
of
Ga
Pre-layers
in
GaAs/Ge
Growth
Using
Gas-Source
Molecular
Beam
Epitaxy, E.A. Fitzgerald, J.M. Kuo, Y.-H. Xie, and P.J.
Silverman, Applied Physics Letters 64, 733 (1994).
[596 K, 3 pages] |
|
|
Semiconductor
Surface
Roughness:
Dependence
on
Sign
and
Magnitude
of
Bulk
Strain, Y.-H. Xie, G.H. Gilmer, C. Roland, P.J. Silverman,
S.K. Buratto, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, S. Schuppler,
M.A. Marcus, and P.H. Citrin, Physical Review Letters 72,
3006
(1994).
[410
K,
4
pages] |
1993
1992
|
|
Relaxed
GexSi1-x Structures for III-V Integration
With Si and High Mobility Two-Dimensional Electron Gases in Si,
E.A. Fitzgerald, Y.-H. Xie, D. Monroe, P.J.Silverman, J.M. Kuo, A.R.
Kortan, F.A. Thiel, and B.E. Weir, Journal of Vacuum Science and
Technology B 10, 1807 (1992). [3167 K, 13 pages]
|
|
|
Quantized
Hall
Effects
in
High-Electron-Mobility
Si/Ge
Structures,
D. Monroe, Y.-H. Xie, E.A. Fitzgerald, and P.J.Silverman, Physical
Review B 46, 7935 (1992). [298 K, 3 pages]
|
1991
|
|
Totally
Relaxed
GexSi1-x Layers with Low
Threading Dislocation Densities Grown on Si Substrates, E.A.
Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel,
Y.-J. Mii, and B.E. Weir, Applied Physics Letters 59,
811 (1991). [480 K, 3 pages] |
Proceedings of Refereed Conferences
2003
|
|
SiGe-On-Insulator
(SGOI):
Two
Structures
for CMOS Application, Z. Cheng, J. Jung, M.
L. Lee, H. Nayfeh, A. J. Pitera, J. L. Hoyt, E. A. Fitzgerald, and D.
A. Antoniadis, SMA Conference Proceedings (2003). [423 K, 7
pages] |
|
|
Hybrid
valence
bands
in
strained-layer heterostructures grown on relaxed SiGe virtual substrates,
M.
L.
Lee
and
E.
A.
Fitzgerald,
MRS Proceedings, Spring 2003.
[573 K, 6 pages] |
|
|
Ge
MOS
characteristics
with
CVD HfO2 gate dielectrics and TaN gate electrode,
W. P. Bai, N. Lu, J. Liu, A. Ramirez, D. L. Kwong, D. Wristers, A.
Ritenour, L. Lee, and D. Antoniadis, 2003 Symposium on VLSI
Technology Digest of Technical Papers (2003). [ K, 2 pages] |
|
|
MOSFET
channel
engineering
using
strained Si, SiGe, and Ge channels, E. A.
Fitzgerald, M. L. Lee, C. W. Leitz, and D. A. Antoniadis, ECS
Meeting Proceedings (2003). [481 K, 10 pages] |
2002
|
|
Yellow-green
emission
for
ETS-LEDs
and lasers based on a strained-InGaP quantum well
heterostructure grown on a transparent, compositionally graded AlInGaP
buffer, L. McGill, J. Wu, and E. A. Fitzgerald, MRS Porceedings,
Fall 2002. [767 K, 10 pages]
|
|
|
Strained-Si-on-Insulator
(SGOI)
and
SiGe-on-Insulator
(SGOI):
Fabrication
Obstacles
and
Solutions,
G. Taraschi, A. J. Pitera, L. M. McGill, Z. Cheng, M. L. Lee, T. A.
Langdo, and E. A. Fitzgerald, Proceedings of Fall 2002 MRS Symposium,
Vol
745,
105
(2002).
|
|
|
SiGe-On-Insulator
(SGOI)
Technology
and
MOSFET Fabrication, Z. Cheng, E. A.
Fitzgerald, and D. A. Antoniadis, SMA Conference Proceedings
(2002).
|
|
|
Strategies
for
direct
monolithic
integration of AlxGa1-xAs/InxGa1-xAs
LEDs
and
lasers
on
Ge/GeSi/Si
substrates
via
relaxed
graded
GexSi1-x
buffer layers, M. E. Groenert, C. W. Leitz, A. J. Pitera, V. K.
Yang, H. Lee, R. J. Ram, and E. A. Fitzgerald, Material Research
Society Symposium Proceedings, Vol. 692, (2002).
|
|
|
Preparation
of
Novel
SiGe-free
strained Si on insulator substrates, T. A. Langdo, A.
Lochtefeld, M T. Currie, R. Hammond, V. K. Yang, C. J. Vineis, H.
Badawi, M. T. Bulsara, and E. A. Fitzgerald, IEEE SOI Conference
(2002). [265 K, 2 pages]
|
2001
|
|
Relaxed
SiGe-on-insulator
fabricated
via
wafer bonding and layer transfer:
etch-back and smart-cut alternatives, Gianni Taraschi, Zhiyuan
Cheng, Matthew T. Currie, Chris W. Leitz, Thomas A. Langdo, Minjoo L.
Lee, Arthur Pitera, Eugene A. Fitzgerald, Judy L. Hoyt, and Dimitri. A.
Antoniadis, Proceedings of the Tenth International Symposium on
Silicon-on-Insulator Technology and Devices, Electrochem. Soc., 27,
(2001).
|
|
|
SiGe-on-insulator
(SGOI):
substrate
preparation
and MOSFET fabrication for electron
mobility evaluation, Zhiyuan Cheng, M. T. Currie, C. W.
Leitz, G. Taraschi, A. Pitera, M. L. Lee, T. A. Langdo, J. L. Hoyt, D.
A. Antoniadis, and E. A. Fitzgerald , Proceedings of the 2001 IEEE International
SOI Conference. IEEE, 13 (2001). |
|
|
Silicon-Germanium
on
Insulator
(SGOI), Zhiyuan Cheng, Matthew T. Currie, Chris W. Leitz,
Gianni Taraschi, Arthur Pitera, Minjoo L. Lee, Thomas A. Langdo, Judy
L. Hoyt, Dimitri. A. Antoniadis, Eugene A. Fitzgerald, Material
Research Society Symposium Proceedings, Symposium A: Materials
Issues in Novel Si-Based Technology, Vol. 686, pp. A1.5.1-A1.5.6,
(2001).
|
|
|
Strained
Ge
channel
p-type
MOSFETs fabricated on Si1-xGex virtual substrates,
M.
L.
Lee,
C.
W.
Leitz,
Z.
Cheng,
A.
J.
Pitera,
G. Taraschi, D. A.
Antoniadis, and E. A. Fitzgerald, Material Research Society
Symposium Proceedings, Vol. 686, (2001).
|
|
|
Channel
engineering
of
SiGe-based
heterostructures for high mobility MOSFETs, C. W. Leitz,
M. T. Currie, M. L. Lee, Z. Cheng, D. A. Antoniadis, and E. A.
Fitzgerald, Material Research Society Symposium Proceedings,
Vol. 686, (2001).
|
2000
|
|
III-V
Space
Solar
Cells
on
Si
Substrates
Using
Graded
GeSi
Buffers,
S.A. Ringel, J.A. Carlin, C.W. Leitz, M. Currie, T. Langdo, E.A.
Fitzgerald, M. Bulsara, D.M. Wilt, and E.V. Clark, 16th European
Photovoltaics Solar Energy Conference and Exhibition (PVSECE),
Glasgow Scotland (May 1-5 2000). [91 K, 6 pages]
|
1998
|
|
Suppression
of
Antiphase
Disorder
in
GaAs
Grown
on
Relaxed
SiGe
Buffers
by
Metal-Organic
Chemical Vapor Deposition, Ting, S.M., et al., MRS
Proceedings, Spring 1998. [623 K, 6 pages]
|
|
|
Engineering
Dislocation
Dynamics
in
Inx(AlyGa1-y) 1-xP
Graded
Buffers Grown on GaP by OMVPE,
Kim, A. and E. Fitzgerald, MRS Proceedings, Spring 1998. [622
K, 6 pages] |
|
|
Toward
Achieving
Efficient
III-V
Space
Cells
on
Ge/GeSi/Si
Wafers,
S.M. Ringel, R.M. Sieg, J.A. Carlin, S. Ting, M. Currie, V. Yang, E.A.
Fitzgerald, M. Bulsara, and B.M. Keyes, Proceedings of the Second
World Conference and Exhibition on Photovoltaic Solar Energy Conversion,
July
1998.
[395
K,
6
Pages] |
1997
1996
Revised:
01/16/12.
|
| |
