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Papers in Refereed Journals


2012


Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition, Y. Bai, M. T. Bulsara and E. A. Fitzgerald, J. Appl. Phys. 111, 013502, January 2012 [1830K, 8 Pages]


2011


Fabrication of GaAs-on-Insulator via Low Temperature Wafer Bonding and Sacrificial Etching of Ge by XeF2, Y. Bai, G. D. Cole, M. T. Bulsara and E. A. Fitzgerald, J. Electrochem. Soc., Volume 159, Issue 2, pp. H183, December 2011. [902K, 8 Pages]

Compositionally-graded InGaAs-InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs, L. Yang, M. T. Bulsara, K. E. Lee and E. A. Fitzgerald,
Journal of Crystal Growth, v. 324, iss. 1, p. 103, June 2011. [1073K, 7 Pages]

2010


Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrate, M. J. Mori, S. T. Boles, and E. A. Fitzgerald, J. Vac. Sci. Tech. A, vol. 28, pp. 182, 14 January 2010. [477 KB, 7 Pages]

Improved interfacial state density in Al2O3 /GaAs interfaces using metal-organic chemical vapor deposition, C. Cheng, E. A. Fitzgerald, Appl. Phys. Lett., vol. 96, pp. 202101, 17 May 2010. [340 KB, 3 Pages]


Free-standing AlxGa1−xAs heterostructures by gas-phase etchingof germanium, G. D. Cole, Y. Bai, M. Aspelmeyer, E. A. Fitzgerald, Appl. Phys. Lett., vol. 96, pp. 261102, 28 June 2010. [1382 KB, 3 Pages]


High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates, P. Sharma, M. T. Bulsara, and E. A. Fitzgerald, ECS Transactions, vol. 33, pp. 843, October 2010. [819 KB, 6 Pages]


Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Substrates, Y. Bai and E. A. Fitzgerald, ECS Transactions, vol. 33, pp. 927, October 2010. [203 KB, 6 Pages]

2009


Catalyst proximity effects on the growth rate of Si nanowires, S. T. Boles, E. A. Fitzgerald, C. V. Thompson, C. K. F. Ho and K. L. Pey, J. Appl. Phys., vol. 106, pp. 044311, 15 August 2009. [855 KB, 9 Pages]

Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al[sub 2]O[sub 3] on GaAs, C. Cheng, J. Hennessy, D. Antoniadis and E. A. Fitzgerald, Appl. Phys. Lett., vol. 95, pp. 082106, 24 August 2009 [414 KB, 3 Pages]

Digital metamorphic alloys, K. E. Lee and E. A. Fitzgerald, J. Appl. Phys., vol. 106, pp. 074911, 1 October 2009 [725 KB, 12 Pages]

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration, N. Yang, M. T. Bulsara, E. A. Fitzgerald, W. K. Liu, D. Lubyshev, J. M. Fastenau, Y. Wu, M. Urteaga, W. Ha, J. Bergman, B. Brar, C. Drazekd, N. Daval, L. Benaissa, E. Augendre, W. E. Hoke, J. R. LaRoche, K. J. Herrick and T. E. Kazior,  SOI Conference, 2009 IEEE International, pp. 1-2, 2009. [357 KB, 2 Pages]

Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates, M. J. Mori and E. A. Fitzgerald
[1.78 MB, 10 Pages]

2008


Growth of highly tensile-strained Ge on relaxed InxGa1-xAs by metal-organic chemical vapor deposition, Yu Bai, Kenneth E. Lee, Chengwei Cheng, Minjoo L. Lee, and Eugene A. Fitzgerald Journal of Applied Physics 104, 084518 (2008). [860 KB, 9 Pages]

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors,
Cheng-Wei Cheng and Eugene A. Fitzgerald Appl. Phys. Lett. 93, 031902 (2008). [406 KB, 3 Pages]

 

2007


Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation, Nathaniel J. Quitoriano and Eugene A. Fitzgerald, Journal of Applied Physics 102 033511 (2007). [2.36MB, 17 pages]

Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces, Nathaniel J. Quitoriano and Eugene A. Fitzgerald, Journal of Applied Physics 101 073509 (2007). [1.00MB, 10 pages]

Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES), Kamesh Chilukuri, Michael J Mori, Carl L Dohrman, Eugene A Fitzgerald, Semiconductor Science and Technology 22 29-34 (2007). [583K, 6 pages]

Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications, Isaacson, David M. Pitera, Arthur J. Fitzgerald, Eugene A. Journal of Applied Physics 101 n 1 (2007).

 

2006


Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices, Dohrman, Carl L. Chilukuri, Kamesh; Isaacson, David M.; Lee, Minjoo L.; Fitzgerald, Eugene A. Materials Science and Engineering B: Solid-State Materials for Advanced Technology v 135, n 3, Dec 15,(2006).

Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe/Si, Isaacson, David M. Dohrman, Carl L.; Fitzgerald, Eugene A.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures v 24 n 6, (2006).

Microelectronically fabricated LiCoO2/SiO 2/polycrystalline-silicon power cells planarized by chemical mechanical polishing, Ariel, Nava. Isaacson, David M. Fitzgerald, Eugene A.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures v 24 , n 2, March/April, (2006).

Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) , Minjoo L. Lee, Dimitri A. Antoniadis, Eugene A. Fitzgerald, Thin Solid Films 508 136-139 (2006). [225K, 4 pages]

Strained-silicon on silicon and strained-silicon on silicon-germanium on silicon by relaxed buffer bonding, David M. Isaacson, Gianni Taraschi, Arthur J. Pitera, Nava Ariel, Thomas A. Langdo, and Eugene A. Fitzgerald, Journal of The Electrochemical Society 153 (2), G134-G140 (2006). [778 K, 7 pages]

 

2005


Lattice-mismatch and CMOS, Fitzgerald, E.A. 2005 International Semiconductor Device Research Symposium, v 2005, 2005 International Semiconductor Device Research Symposium, p 127-128, (2005).

Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGey/strained-Si heterostructure grown on a relaxed Si1-xGex buffer, Saurabh Gupta, Minjoo L. Lee, David M. Isaacson and Eugene A. Fitzgerald, Materials Science and Engineering B 124-125, 102 (2005). [277 K, 5 pages]

Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si0.4Ge0.6/Ge for layer exfoliation applications, Arthur J. Pitera and E. A. Fitzgerald, Journal of Applied Physics 97, 104511 (2005). [993 K, 11 pages]

Electrochemically controlled transport of lithium through ultrathin SiO2, N. Ariel, G. Ceder, D. Sadoway, E. A. Fitzgerald, Journal of Applied Physics 98, 023516 (2005). [351 K, 7 pages]

Improved hole mobilities and thermal stability in a strained-Si/strained-Si1-yGey/strained-Si heterostructure grown on a relaxed Si1-xGex buffer, S. Gupta, M. L. Lee, E. A. Fitzgerald, Applied Physics Letters 86, 192104 (2005). [105 K, 3 pages]

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors, M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M. T. Currie, A. Lochtefeld, Journal of Applied Physics 97 (1), 011101 (2005). [558 K, 28 pages] 

 

2004


Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques, G. Taraschi, A. J. Pitera, and E. A. Fitzgerald, Solid-State Electronics 48, 1297 (2004). [477 K, 9 pages] 

Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI), Z. Cheng, J. Jung, M. L. Lee, A. J. Pitera, J. L. Hoyt, D. A. Antoniadis, and E. A. Fitzgerald, Semicond. Sci. Technol. 19, L48 (2004). [81 K, 4 pages] 

Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes, L. McGill, J. W. Wu, and E. A. Fitzgerald, Journal of Applied Physics 95 (12), 7561 (2004). [539 K, 6 pages]

Coplanar integration of lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si1–xGex/Si virtual substrates, A. J. Pitera, G. Taraschi, M. L. Lee, C. W. Leitz, Z.Y. Cheng, and E. A. Fitzgerald, Journal of the Electrochemical Society 151 (7), G443 (2004). [664 K, 5 pages]

Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures, M.L. Lee and E. A. Fitzgerald, Journal of Applied Physics 95 (3), 1550 (2004). [112 K, 6 pages]

Growth of strained Si and strained Ge heterostructures on relaxed Si1–xGex by ultrahigh vacuum chemical vapor deposition, M.L. Lee, A. J. Pitera, and E. A. Fitzgerald, Journal of Vacuum Science & Technology B 22 (1), 158 (2004). [328 K, 7 pages]

Ultrathin strained Si-on-insulator and SiGe-on-insulator created using low temperature wafer bonding and metastable stop layers, G. Taraschi, A. J. Pitera, L. M. McGill, Z. Cheng, M.L. Lee, T. A. Langdo, and E. A. Fitzgerald, Journal of the Electrochemical Society 151 (1), G47-56 (2004). [1350 K, 10 pages]

 

2003


SiGe-free strained Si on insulator by wafer bonding and layer transfer, T. A. Langdo, M T. Currie, A. Lochtefeld, R. Hammond, J. A. Carlin, M. Erdtmann, G. Braithwaite, V. K. Yang, C. J. Vineis, H. Badawi, and M. T. Bulsara, Applied Physics Letters 82, 4256 (2003). [116 K, 3 pages]

Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors, M.L. Lee and E. A. Fitzgerald, Applied Physics Letters 83 (20), 4202 (2003). [192 K, 3 pages]

Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate, V. K. Yang, S. M. Ting, M. E. Groenert, M. T. Bulsara, M. T. Currie, C. W. Leitz, and Eugene A. Fitzgerald, Journal of Applied Physics 93, 5095 (2003). [324 K, 8 pages]

Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2/Si0.75Ge0.25 using various H2 pressures, Gianni Tarschi, Sajan Saini, Wendy W. Fan, Lionel C. Kimerling, and Eugene A. Fitzgerald, Journal of Applied Physics 93, 9988. [798 K, 3 pages]

Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates, V. K. Yang, M. E. Groenert, C. W. Leitz, A. J. Pitera, M. T. Currie, and Eugene A. Fitzgerald, Journal of Applied Physics 93, 3859 (2003). [345 K, 7 pages]

Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1-xGex, Minjoo L. Lee and Eugene A. Fitzgerald, Journal of Applied Physics 94 2590 (2003). [193 K, 7 pages]

Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers, Michael E. Groenert, Christopher W. Leitz, Arthur J. Pitera, and Vicky Yang, Journal of Applied Physics 93 362 (2003). [498 K, 6 pages]

Strain relaxation in graded InGaN/GaN epilayers grown on sapphire, T. L. Song, S. J. Chua, E. A. Fitzgerald, P. Chen, and S. Tripathy, Applied Physics Letters 83, 1545 (2003). [58 K, 3 pages]

Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1-x buffer layers, M. E. Groenert, A. J. Pitera, R. J. Ram, and E. A. Fitzgerald, Journal of Vacuum Science and Technology B 21, 1064 (2003). [540 K, 6 pages]

Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x<y) virtual substrate, J. Jung, M. L. Lee, S. Yu, E. A. Fitzgerald, and D. A. Antoniadis, IEEE Electron Device Letters 24, 460 (2003). [304 K, 3 pages]

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers, T. S. Drake, C. Ni Chleirigh, M. L. Lee, A. J. Pitera, Eugene A. Fitzgerald, Dimitri A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, and J. L. Hoyt, Applied Physics Letters 83, 875 (2003). [314 K, 3 pages]

Theoretical analysis of Si1-x-yGexCy near-infrared photodetectors, B. Li, S.-J. Chua, and Eugene A. Fitzgerald, Optical Engineering 42, 1993 (2003). [160 K, 7 pages]

Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs, H. M. Nayfeh, C. W. Leitz, A. J. Pitera, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadis, IEEE Electron Device Letters 24, 248 (2003). [297 K, 3 pages]

 

2002


Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back, Gianni Taraschi, Thomas A. Langdo, Matthew T. Currie, Eugene A. Fitzgerald, and Dimitri A. Antoniadis, Journal of Vacuum Science & Technology B 20, 725 (2002). [849 K, 3 pages]


Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transisitors, C. W. Leitz, TM. L. Lee, Z.-Y. Cheng, Dimitri A. Antoniadis, and Eugene A. Fitzgerald, Journal of Applied Physics 92, 3745 (2002). [99 K, 7 pages]


Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates, V. K. Yang, M. E. Groenert, G. Taraschi, C. W. Leitz, A. J. Pitera, M. T. Currie, Z. Cheng, and E. A. Fitzgerald, Journal of Materials Science: Materials in Electronics 13, 377 (2002). [497 K, 4 pages]


Interfacial reactions of Ni on Si1-xGex (x= 0.2, 0.3) at low temperature by rapid thermal annealing, H. B. Zhao, K. L. Pey, W. K. Choi, S. Chattopadhyay, E. A. Fitzgerald, D. A. Antoniadis, and P. S. Lee, Journal of Applied Physics 92, 214 (2002). [163 K, 4 pages]


Comparison of arsenic and phosphorus diffusion behavior in silicon-germanium alloys, S. Eguchi, J. L. Hoyt, C. W. Leitz, and E. A. Fitzgerald, Applied Physics Letters 80, 1743 (2002). [48 K, 3 pages]


Thermal reaction of nickel and Si0.75Ge0.25 alloy, K. L. Pey, W. K. Choi, S. Chattopadhyay, H. B. Zhao, E. A. Fitzgerald, D. A. Antoniadis, and P. S. Lee, Journal of Vacuum Science and Technology A 20, 1903 (2002). [1193 K, 8 pages]


1x2 optical waveguide filters based on multimode interference for 1.3- and 1.55-µm operation, B. Li, S.-J. Chua, C. W. Leitz, and Eugene A. Fitzgerald, Optical Engineering 41, 723 (2002). [112 K, 5 pages]


Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure, W. K. Choi, W. K. Chim, C. L. Heng, L. W. Teo, V. Ho, V. Ng, D. A. Antoniadis, and E. A. Fitzgerald, Applied Physics Letters 80, 2014 (2002). [290 K, 3 pages]

 

2001


Relaxed silicon-germanium on insulator substrate by layer transfer, Zhiyuan Cheng, Gianni Taraschi, Matthew T. Currie, Chris W. Leitz, Minjoo L. Lee, Arthur Pitera, Thomas A. Langdo, Judy L. Hoyt, Dimitri A. Antoniadis, and Eugene A. Fitzgerald, Journal of Electronic Materials 30, L37 (2001). [162 K, 3 pages]


Electron Mobility Enhancement in Strained-Si n-MOSFETs Fabricated on SiGe-on-Insulator (SGOI) Substrates, Zhiyuan Cheng, Matthew T. Currie, Chris W. Leitz, Gianni Taraschi, Eugene A. Fitzgerald, Judy L. Hoyt, and Dimitri A. Antoniadis, IEEE Electron Device Letters 22, 321 (2001). [130 K, 3 pages]


N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD, C. S. Tan, W. K. Choi, L. K. Bera, K. L. Pey, D. A. Antoniadis, E. A. Fitzgerald, M. T. Currie, and C. K. Maiti, Solid-State Electronics 45, 1945 (2001). [186 K, 5 pages]


Dislocation Glide and Blocking Kinetics in Compositionally Graded SiGe/Si, C.W. Leitz, M.T. Currie, A.Y. Kim, J. Lai, E. Robbins, E.A. Fitzgerald and M.T. Bulsara, Journal of Applied Physics 90, 2730 (2001). [126 K, 7 pages]

Strained Ge Channel p-Type Metal-Oxide-Semiconductor Field-Effect Transistors Grown on Si1-xGex/Si Virtual Substrates, M.L. Lee, C.W. Leitz, Z. Cheng, A.J. Pitera, T. Langdo, M.T. Currie, G. Taraschi, D.A. Antoniadis, and E.A. Fitzgerald, Applied Physics Letters 79, 3344 (2001). [176 K, 3 pages]

Hole Mobility Enhancements in Strained Si/Si1-yGey p-Type Metal-Oxide-Semiconductor Field-Effect Transistors Grown on Relaxed Si1-xGex (x<y) Virtual Substrates, C.W. Leitz, M.T. Currie, M.L. Lee, Z.-Y. Cheng, D.A. Antoniadis, and E.A. Fitzgerald, Applied Physics Letters 79, 4246 (2001). [96 K, 3 pages]

Carrier Mobilities and Process Stability of Strained Si n- and p-MOSFETs on SiGe Virtual Substrates, M.T. Currie, C.W. Leitz, T.A. Langdo, G. Taraschi, D.A. Antoniadis, and E.A. Fitzgerald, Journal of Vacuum Science and Technology B 19, 2268 (2001). [213 K, 12 pages]

 

2000


Metal-organic Chemical Vapor Deposition of Single Domain GaAs on Ge/GexSi1-x/Si and Ge Substrates, S.M. Ting and E.A. Fitzgerald, Journal of Applied Physics 85, 2618 (2000). [783 K, 11 pages]

Alternatives to Thick MBE-grown Relaxed SiGe Buffers, T. Hackbarth, H.-J. Herzog, M. Zeuner, G. Hock, E.A. Fitzgerald, M. Bulsara, C. Rosenblad, and H. von Kanel, Thin Solid Films 369, 148 (2000). [287 K, 4 pages]

 

1999


Dislocation Dynamics in Relaxed Graded Composition Semiconductors, E. A. Fitzgerald, A. Y. Kim, M. T. Currie, T. A. Langdo, G. Taraschi, and M. T. Bulsara, Materials Science and Engineering B 67, 53 (1999). [265 K, 9 pages]

Dislocations in Relaxed SiGe/Si Heterostructures, E. A. Fitzgerald, M. T. Currie, S. B. Samavedam, T. A. Langdo, G. Taraschi, V. Yang, C. W. Leitz and M. T. Bulsara, Physica Status Solidi A 171, 227 (1999). [355 K, 12 pages]

Evolution of Microstructure and Dislocation Dynamics in InxGa1-xP Graded Buffers Grown on GaP by Metalorganic Vapor Phase Epitaxy: Engineering Device-quality Substrate Materials, A. Y. Kim, W. S. McCullough, E. A. Fitzgerald, Journal of Vacuum Science and Technology B 17, 1485 (1999). [1198 K, 17 pages]

 

1998


Graded InxGa1-xAs/GaAs 1.3 µm Wavelength Light Emitting Diode Structures Grown with Molecular Beam Epitaxy, M.T. Bulsara, V. Yang, A. Thilderkvist, and E.A. Fitzgerald, Journal of Applied Physics 83, 592 (1998). [4939 K, 8 pages]

Relaxed InxGa1-xAs Graded Buffers Grown with Organometallic Vapor Phase Epitaxy on GaAs, Mayank T. Bulsara, Chris Leitz, and Eugene A. Fitzgerald, Applied Physics Letters 72, 1608 (1998). [1014 K, 3 pages]

Controlling Threading Dislocation Densities in Ge on Si Using Graded SiGe Layers and Chemical-Mechanical Polishing, M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Applied Physics Letters 72, 1718 (1998). [328 K, 3 pages]

Anti-Phase Domain-Free Growth of GaAs on Offcut (001) Ge Wafers by Molecular Beam Epitaxy with Suppressed Ge Outdiffusion, R.M. Sieg, S.A. Ringel, S.M. Ting, E.A. Fitzgerald, and R.N. Sacks, Journal of Electronic Materials 27, 900 (1998). [516 K, 10 pages]

Scanning Force Microscopy Studies of GaAs Films Grown on Offcut Ge Substrates, Q. Xu, J.W.P. Hsu, S.M. Ting, E.A. Fitzgerald, R.M. Sieg, and S.A. Ringel, Journal of Electronic Materials 27, 1010 (1998). [3023 K, 9 pages]

High-Quality Germanium Photodiodes Integrated on Silicon Substrates Using Optimized Relaxed Graded Buffers, S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, Applied Physics Letters 73, 2125 (1998). [146 K, 3 pages]

 

1997


Novel Dislocation Structure and Surface Morphology Effects in Relaxed Ge/Si-Ge(Graded)/Si Structures., S.B. Samavedam and E.A. Fitzgerald, Journal of Applied Physics 81, 3108 (1997). [563 K, 9 pages]

Influence of Strain on Semiconductor Thin Film Epitaxy, E.A. Fitzgerald, S. Samavedam, Y.H. Xie, and L.M. Giovane, Journal of Vacuum Science and Technology A 15, 1048 (1997). [636 K, 9 pages]

 

1994


Necessity of Ga Pre-layers in GaAs/Ge Growth Using Gas-Source Molecular Beam Epitaxy, E.A. Fitzgerald, J.M. Kuo, Y.-H. Xie, and P.J. Silverman, Applied Physics Letters 64, 733 (1994). [596 K, 3 pages]

Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain, Y.-H. Xie, G.H. Gilmer, C. Roland, P.J. Silverman, S.K. Buratto, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, S. Schuppler, M.A. Marcus, and P.H. Citrin, Physical Review Letters 72, 3006 (1994). [410 K, 4 pages]

 

1993


Very High Mobility Two-Dimensional Hole Gas in Si/GexSi1-x/Ge Structures Grown by Molecular Beam Epitaxy, Y.-H. Xie, D. Monroe, E.A. Fitzgerald, P.J. Silverman, F.A. Thiel, and. G.P. Watson, Applied Physics Letters 63, 2263 (1993). [301 K, 2 pages]

 

1992


Relaxed GexSi1-x Structures for III-V Integration With Si and High Mobility Two-Dimensional Electron Gases in Si, E.A. Fitzgerald, Y.-H. Xie, D. Monroe, P.J.Silverman, J.M. Kuo, A.R. Kortan, F.A. Thiel, and B.E. Weir, Journal of Vacuum Science and Technology B 10, 1807 (1992). [3167 K, 13 pages]

Quantized Hall Effects in High-Electron-Mobility Si/Ge Structures, D. Monroe, Y.-H. Xie, E.A. Fitzgerald, and P.J.Silverman, Physical Review B 46, 7935 (1992). [298 K, 3 pages]

 

1991


Totally Relaxed GexSi1-x Layers with Low Threading Dislocation Densities Grown on Si Substrates, E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.-J. Mii, and B.E. Weir, Applied Physics Letters 59, 811 (1991). [480 K, 3 pages]

 

 

Proceedings of Refereed Conferences

2003


SiGe-On-Insulator (SGOI): Two Structures for CMOS Application, Z. Cheng, J. Jung, M. L. Lee, H. Nayfeh, A. J. Pitera, J. L. Hoyt, E. A. Fitzgerald, and D. A. Antoniadis, SMA Conference Proceedings (2003). [423 K, 7 pages]

Hybrid valence bands in strained-layer heterostructures grown on relaxed SiGe virtual substrates, M. L. Lee and E. A. Fitzgerald, MRS Proceedings, Spring 2003. [573 K, 6 pages]

Ge MOS characteristics with CVD HfO2 gate dielectrics and TaN gate electrode, W. P. Bai, N. Lu, J. Liu, A. Ramirez, D. L. Kwong, D. Wristers, A. Ritenour, L. Lee, and D. Antoniadis, 2003 Symposium on VLSI Technology Digest of Technical Papers (2003). [ K, 2 pages]

MOSFET channel engineering using strained Si, SiGe, and Ge channels, E. A. Fitzgerald, M. L. Lee, C. W. Leitz, and D. A. Antoniadis, ECS Meeting Proceedings (2003). [481 K, 10 pages]

 

2002


Yellow-green emission for ETS-LEDs and lasers based on a strained-InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer, L. McGill, J. Wu, and E. A. Fitzgerald, MRS Porceedings, Fall 2002. [767 K, 10 pages]


Strained-Si-on-Insulator (SGOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions, G. Taraschi, A. J. Pitera, L. M. McGill, Z. Cheng, M. L. Lee, T. A. Langdo, and E. A. Fitzgerald, Proceedings of Fall 2002 MRS Symposium, Vol 745, 105 (2002).


SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication, Z. Cheng, E. A. Fitzgerald, and D. A. Antoniadis, SMA Conference Proceedings (2002).


Strategies for direct monolithic integration of AlxGa1-xAs/InxGa1-xAs LEDs and lasers on Ge/GeSi/Si substrates via relaxed graded GexSi1-x buffer layers, M. E. Groenert, C. W. Leitz, A. J. Pitera, V. K. Yang, H. Lee, R. J. Ram, and E. A. Fitzgerald, Material Research Society Symposium Proceedings, Vol. 692, (2002).


Preparation of Novel SiGe-free strained Si on insulator substrates, T. A. Langdo, A. Lochtefeld, M T. Currie, R. Hammond, V. K. Yang, C. J. Vineis, H. Badawi, M. T. Bulsara, and E. A. Fitzgerald, IEEE SOI Conference (2002). [265 K, 2 pages]

 

2001


Relaxed SiGe-on-insulator fabricated via wafer bonding and layer transfer: etch-back and smart-cut alternatives, Gianni Taraschi, Zhiyuan Cheng, Matthew T. Currie, Chris W. Leitz, Thomas A. Langdo, Minjoo L. Lee, Arthur Pitera, Eugene A. Fitzgerald, Judy L. Hoyt, and Dimitri. A. Antoniadis, Proceedings of the Tenth International Symposium on Silicon-on-Insulator Technology and Devices, Electrochem. Soc., 27, (2001).


SiGe-on-insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation, Zhiyuan Cheng, M. T. Currie, C. W. Leitz, G. Taraschi, A. Pitera, M. L. Lee, T. A. Langdo, J. L. Hoyt, D. A. Antoniadis, and E. A. Fitzgerald , Proceedings of the 2001 IEEE International SOI Conference. IEEE, 13 (2001).

Silicon-Germanium on Insulator (SGOI), Zhiyuan Cheng, Matthew T. Currie, Chris W. Leitz, Gianni Taraschi, Arthur Pitera, Minjoo L. Lee, Thomas A. Langdo, Judy L. Hoyt, Dimitri. A. Antoniadis, Eugene A. Fitzgerald, Material Research Society Symposium Proceedings, Symposium A: Materials Issues in Novel Si-Based Technology, Vol. 686, pp. A1.5.1-A1.5.6, (2001).


Strained Ge channel p-type MOSFETs fabricated on Si1-xGex virtual substrates, M. L. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, G. Taraschi, D. A. Antoniadis, and E. A. Fitzgerald, Material Research Society Symposium Proceedings, Vol. 686, (2001).


Channel engineering of SiGe-based heterostructures for high mobility MOSFETs, C. W. Leitz, M. T. Currie, M. L. Lee, Z. Cheng, D. A. Antoniadis, and E. A. Fitzgerald, Material Research Society Symposium Proceedings, Vol. 686, (2001).

 

2000


III-V Space Solar Cells on Si Substrates Using Graded GeSi Buffers, S.A. Ringel, J.A. Carlin, C.W. Leitz, M. Currie, T. Langdo, E.A. Fitzgerald, M. Bulsara, D.M. Wilt, and E.V. Clark, 16th European Photovoltaics Solar Energy Conference and Exhibition (PVSECE), Glasgow Scotland (May 1-5 2000). [91 K, 6 pages]

 

1998


Suppression of Antiphase Disorder in GaAs Grown on Relaxed SiGe Buffers by Metal-Organic Chemical Vapor Deposition, Ting, S.M., et al., MRS Proceedings, Spring 1998. [623 K, 6 pages]

Engineering Dislocation Dynamics in Inx(AlyGa1-y) 1-xP Graded Buffers Grown on GaP by OMVPE, Kim, A. and E. Fitzgerald, MRS Proceedings, Spring 1998. [622 K, 6 pages]

Toward Achieving Efficient III-V Space Cells on Ge/GeSi/Si Wafers, S.M. Ringel, R.M. Sieg, J.A. Carlin, S. Ting, M. Currie, V. Yang, E.A. Fitzgerald, M. Bulsara, and B.M. Keyes, Proceedings of the Second World Conference and Exhibition on Photovoltaic Solar Energy Conversion, July 1998. [395 K, 6 Pages]

 

1997


High Quality Germanium Photodiodes on Silicon Substrates Using an Intermediate Chemical Mechanical Polishing Step, Srikanth B. Samavedam, Matthew T. Currie, Thomas A. Langdo, Steve M. Ting, and Eugene A. Fitzgerald, MRS Proceedings, Fall 1997. [45 K, 6 Pages]

 

1996


Influence of Substrate Off-Cut on the Defect Structure in Relaxed Graded Si-Ge/Si Layers, Srikanth B. Samavedam, F. Romanato, M.S. Goorsky, and E.A. Fitzgerald, MRS Proceedings, Fall 1996. [291 K, 7 pages]

 

Revised: 01/16/12.