|
Preprints
All Papers are in PDF Format.
2009
|
|
Catalyst Proximity Effects on
the Growth Rate of Si Nanowires,
ST
Boles, CKF Ho, KL Pey, EA Fitzgerald, and CV Thompson
[2.4 MB, 34 Pages]
Cite as: ST Boles, CKF Ho, KL
Pey, EA Fitzgerald, and CV Thompson "The Fitzgerald
Group at MIT," July 2009. [Online].
Available: http://sauvignon.mit.edu/papers/2009/sboles01_09.pdf
[Accessed: *Today's Date*].
|
|
|
|
The Discrepancy of
Capacitance-Voltage (C-V) Characteristics of n- and p-GaAs passivated
with in and ex situ Atomic-layer-deposition of Al2O3
with Arsine Treatment, Cheng-Wei Cheng, John Hennessy, Dimitri
Antoniadis and Eugene A. Fitzgerald
[1.29 MB, 9 Pages]
Cite as: CW Cheng, J Hennessy, D
Antoniadis, EA Fitzgerald "The Fitzgerald
Group at MIT," May 2009. [Online].
Available: http://sauvignon.mit.edu/papers/2009/chengwei01_09.pdf
[Accessed: *Today's Date*].
|
Papers in Refereed Journals
|
2009
2008
|
|
Growth of highly
tensile-strained Ge on relaxed InxGa1-xAs by metal-organic chemical
vapor deposition, Yu Bai, Kenneth E. Lee, Chengwei Cheng, Minjoo L.
Lee, and Eugene A. Fitzgerald Journal of Applied Physics 104,
084518
(2008). [860 KB, 9 Pages]
|
|
|
In situ metal-organic
chemical vapor deposition atomic-layer deposition of aluminum oxide on
GaAs using trimethyaluminum and isopropanol precursors,
Cheng-Wei Cheng and Eugene A. Fitzgerald Appl. Phys. Lett. 93,
031902 (2008). [406 KB, 3 Pages]
|
2007
|
|
Relaxed,
high-quality InP on GaAs by using InGaAs and InGaP graded
buffers to avoid phase separation, Nathaniel J. Quitoriano and
Eugene A. Fitzgerald, Journal of Applied Physics 102
033511 (2007). [2.36MB, 17 pages] |
|
|
Alternative
slip system activation in lattice-mismatched InP/InGaAs
interfaces, Nathaniel J. Quitoriano and Eugene A. Fitzgerald, Journal
of Applied Physics 101 073509 (2007). [1.00MB, 10 pages] |
|
|
Monolithic
CMOS-compatible AlGaInP visible LED arrays on silicon on
lattice-engineered substrates (SOLES), Kamesh Chilukuri, Michael J
Mori, Carl L Dohrman, Eugene A Fitzgerald, Semiconductor Science
and Technology 22 29-34 (2007). [583K, 6 pages] |
|
|
Relaxed graded SiGe
donor substrates incorporating hydrogen-gettering
and buried etch stop layers for strained silicon layer transfer
applications, Isaacson, David M. Pitera, Arthur J. Fitzgerald,
Eugene A. Journal of Applied Physics 101 n 1 (2007).
|
2006
|
|
Fabrication of
silicon on lattice-engineered substrate (SOLES) as a
platform for monolithic integration of CMOS and optoelectronic devices,
Dohrman, Carl L. Chilukuri, Kamesh; Isaacson, David M.; Lee, Minjoo L.;
Fitzgerald, Eugene A. Materials Science and Engineering B:
Solid-State Materials for Advanced Technology v 135, n 3,
Dec 15,(2006). |
|
|
Deviations from ideal
nucleation-limited relaxation in high-Ge content
compositionally graded SiGe/Si, Isaacson, David M. Dohrman, Carl
L.; Fitzgerald, Eugene A.Journal of Vacuum Science and Technology B:
Microelectronics and Nanometer Structures v 24 n 6,
(2006). |
|
|
Microelectronically
fabricated LiCoO2/SiO 2/polycrystalline-silicon
power cells planarized by chemical mechanical polishing, Ariel,
Nava. Isaacson, David M. Fitzgerald, Eugene A.Journal of Vacuum
Science and Technology B: Microelectronics and Nanometer Structures
v 24 , n 2, March/April, (2006).
|
|
|
Challenges
in epitaxial growth of SiGe buffers on Si (111), (110), and (112)
, Minjoo L. Lee, Dimitri A. Antoniadis, Eugene A. Fitzgerald, Thin
Solid Films 508 136-139 (2006). [225K, 4 pages] |
|
|
Strained-silicon on
silicon and strained-silicon
on silicon-germanium on silicon by relaxed
buffer bonding, David M. Isaacson, Gianni Taraschi, Arthur J.
Pitera, Nava Ariel,
Thomas A. Langdo, and Eugene A. Fitzgerald, Journal of The
Electrochemical Society 153 (2), G134-G140 (2006). [778 K,
7 pages] |
2005
|
|
Lattice-mismatch
and CMOS, Fitzgerald, E.A. 2005 International Semiconductor
Device Research Symposium, v 2005, 2005 International Semiconductor
Device Research Symposium, p 127-128, (2005). |
|
|
Improved thermal stability and hole
mobilities in a strained-Si/strained-Si1-yGey/strained-Si
heterostructure grown on a relaxed Si1-xGex buffer,
Saurabh Gupta, Minjoo L. Lee, David M. Isaacson and Eugene A.
Fitzgerald, Materials Science and Engineering B 124-125,
102 (2005). [277 K, 5 pages] |
|
|
Hydrogen gettering and strain-induced
platelet nucleation in tensilely strained Si0.4Ge0.6/Ge
for layer exfoliation applications,
Arthur J. Pitera and E. A. Fitzgerald, Journal of Applied Physics
97,
104511 (2005). [993 K, 11 pages] |
|
|
Electrochemically controlled transport
of lithium through ultrathin SiO2,
N. Ariel, G. Ceder, D. Sadoway, E. A. Fitzgerald, Journal of
Applied Physics 98,
023516 (2005). [351 K, 7 pages] |
|
|
Improved
hole mobilities and thermal stability in a strained-Si/strained-Si1-yGey/strained-Si
heterostructure grown on a relaxed Si1-xGex buffer,
S. Gupta, M. L. Lee, E. A. Fitzgerald, Applied Physics Letters 86,
192104 (2005). [105 K, 3 pages] |
|
|
Strained
Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor
field-effect
transistors, M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M.
T. Currie, A. Lochtefeld, Journal of Applied Physics 97
(1),
011101 (2005). [558 K, 28 pages] |
2004
|
|
Strained
Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication
techniques,
G. Taraschi, A. J. Pitera, and E. A. Fitzgerald, Solid-State
Electronics 48,
1297 (2004). [477 K, 9 pages] |
|
|
Hole
mobility enhancement in strained-Si/strained-SiGe heterostructure
p-MOSFETs
fabricated on SiGe-on-insulator (SGOI), Z. Cheng, J. Jung, M.
L. Lee, A. J. Pitera, J. L. Hoyt, D. A. Antoniadis, and E. A.
Fitzgerald, Semicond.
Sci. Technol. 19, L48 (2004). [81 K, 4 pages] |
|
|
Yellow-green strained-InGaP
quantum-well epitaxial-transparent-substrate light emitting diodes,
L. McGill, J. W. Wu, and E. A. Fitzgerald, Journal of Applied
Physics 95 (12), 7561 (2004). [539 K, 6 pages]
|
|
|
Coplanar integration of
lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si1–xGex/Si
virtual substrates, A. J. Pitera, G. Taraschi, M. L. Lee, C. W.
Leitz, Z.Y. Cheng, and E. A. Fitzgerald, Journal of the
Electrochemical Society 151 (7), G443 (2004). [664 K, 5
pages] |
|
|
Electron mobility
characteristics of n-channel metal-oxide-semiconductor
field-effect transistors fabricated on Ge-rich single- and dual-channel
SiGe heterostructures, M.L. Lee and E. A. Fitzgerald, Journal
of Applied Physics 95 (3), 1550 (2004). [112 K, 6 pages]
|
|
|
Growth of strained Si
and strained Ge heterostructures on relaxed Si1–xGex
by ultrahigh vacuum chemical vapor deposition, M.L. Lee, A. J.
Pitera, and E. A. Fitzgerald, Journal of Vacuum Science &
Technology B 22 (1), 158 (2004). [328 K, 7 pages]
|
|
|
Ultrathin strained
Si-on-insulator and SiGe-on-insulator created using low temperature
wafer bonding and metastable stop layers,
G. Taraschi, A. J. Pitera, L. M. McGill, Z. Cheng, M.L. Lee, T. A.
Langdo, and E. A. Fitzgerald, Journal of the Electrochemical Society 151
(1), G47-56 (2004). [1350 K, 10 pages] |
2003
|
|
SiGe-free strained Si
on insulator by wafer bonding and layer transfer, T. A. Langdo, M
T. Currie, A. Lochtefeld, R. Hammond, J. A. Carlin, M. Erdtmann, G.
Braithwaite, V. K. Yang, C. J. Vineis, H. Badawi, and M. T. Bulsara, Applied
Physics Letters 82, 4256 (2003). [116 K, 3 pages]
|
|
|
Strained Si/strained Ge
dual-channel heterostructures on relaxed Si0.5Ge0.5
for symmetric mobility p-type and n-type
metal-oxide-semiconductor field-effect transistors, M.L. Lee and E.
A. Fitzgerald, Applied Physics Letters 83 (20), 4202
(2003). [192 K, 3 pages] |
|
|
Comparison of
luminescent efficiency of InGaAs quantum well structures grown on Si,
GaAs, Ge, and SiGe virtual substrate, V. K. Yang, S. M. Ting, M. E.
Groenert, M. T. Bulsara, M. T. Currie, C. W. Leitz, and Eugene A.
Fitzgerald, Journal of Applied Physics 93, 5095 (2003).
[324 K, 8 pages] |
|
|
Nanostructure and
infrared photoluminescence of nanocrystalline Ge formed by reduction of
Si0.75Ge0.25O2/Si0.75Ge0.25
using various H2 pressures, Gianni Tarschi, Sajan Saini, Wendy W. Fan,
Lionel C. Kimerling, and Eugene A. Fitzgerald, Journal of Applied
Physics 93, 9988.
[798 K, 3 pages] |
|
|
Crack formation in GaAs
heteroepitaxial films on Si and SiGe virtual substrates, V. K.
Yang, M. E. Groenert, C. W. Leitz, A. J. Pitera, M. T. Currie, and
Eugene A. Fitzgerald, Journal of Applied Physics 93,
3859 (2003). [345 K, 7 pages] |
|
|
Hole mobility enhancements
in nanometer-scale strained-silicon heterostructures grown on Ge-rich
relaxed Si1-xGex, Minjoo L. Lee and Eugene A. Fitzgerald, Journal
of Applied Physics 94 2590 (2003). [193 K, 7
pages] |
|
|
Monolithic integration
of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed
graded GeSi buffer layers, Michael E. Groenert, Christopher W. Leitz,
Arthur J. Pitera, and Vicky Yang, Journal of Applied Physics 93
362 (2003). [498 K, 6 pages] |
|
|
Strain relaxation in
graded InGaN/GaN epilayers grown on sapphire, T. L. Song, S. J.
Chua, E. A. Fitzgerald, P. Chen, and S. Tripathy, Applied Physics
Letters 83, 1545 (2003). [58 K, 3 pages] |
|
|
Improved
room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs
lasers fabricated on Si substrates via relaxed graded GexSi1-x
buffer layers, M. E. Groenert, A. J. Pitera, R. J. Ram, and E. A.
Fitzgerald, Journal of Vacuum Science and Technology B 21,
1064 (2003). [540 K, 6 pages] |
|
|
Implementation of both
high-hole and electron mobility in strained Si/strained Si1-yGey
on relaxed Si1-xGex (x<y) virtual substrate,
J. Jung, M. L. Lee, S. Yu, E. A. Fitzgerald, and D. A. Antoniadis, IEEE
Electron Device Letters 24, 460 (2003). [304 K, 3 pages]
|
|
|
Effect of rapid thermal
annealing on strain in ultrathin strained silicon on insulator layers,
T. S. Drake, C. Ni Chleirigh, M. L. Lee, A. J. Pitera, Eugene A.
Fitzgerald, Dimitri A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N.
Klymko, and J. L. Hoyt, Applied Physics Letters 83, 875
(2003). [314 K, 3 pages] |
|
|
Theoretical
analysis of Si1-x-yGexCy near-infrared
photodetectors, B. Li, S.-J. Chua, and Eugene A. Fitzgerald, Optical
Engineering 42, 1993 (2003). [160 K, 7 pages]
|
|
|
Influence
of high channel doping on the inversion layer electron
mobility in strained silicon n-MOSFETs, H. M. Nayfeh, C. W. Leitz,
A. J. Pitera, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadis, IEEE
Electron Device Letters 24, 248 (2003). [297 K, 3 pages]
|
2002
|
|
Relaxed
SiGe-on-insulator fabricated via wafer bonding and etch back,
Gianni Taraschi, Thomas A. Langdo, Matthew T. Currie, Eugene A.
Fitzgerald, and Dimitri A. Antoniadis, Journal of Vacuum Science
& Technology B 20, 725 (2002). [849 K, 3 pages]
|
|
|
Hole mobility
enhancements and alloy scattering-limited mobility in tensile strained
Si/SiGe surface channel metal-oxide-semiconductor field-effect
transisitors, C. W. Leitz, TM. L. Lee, Z.-Y. Cheng, Dimitri A.
Antoniadis, and Eugene A. Fitzgerald, Journal of Applied
Physics 92, 3745 (2002). [99 K, 7 pages]
|
|
|
Monolithic
integration of III-V optical interconnects on Si using SiGe virtual
substrates, V. K. Yang, M. E. Groenert, G. Taraschi, C. W. Leitz,
A. J. Pitera, M. T. Currie, Z. Cheng, and E. A. Fitzgerald, Journal
of Materials Science: Materials in Electronics 13, 377
(2002). [497 K, 4 pages]
|
|
|
Interfacial reactions of
Ni on Si1-xGex (x= 0.2, 0.3) at low temperature
by rapid thermal annealing, H. B. Zhao, K. L. Pey, W. K. Choi, S.
Chattopadhyay, E. A. Fitzgerald, D. A. Antoniadis, and P. S. Lee,
Journal of Applied Physics 92, 214 (2002). [163 K, 4 pages]
|
|
|
Comparison of arsenic
and phosphorus diffusion behavior in silicon-germanium alloys, S.
Eguchi, J. L. Hoyt, C. W. Leitz, and E. A. Fitzgerald, Applied
Physics Letters 80, 1743 (2002). [48 K, 3 pages]
|
|
|
Thermal reaction of
nickel and Si0.75Ge0.25 alloy, K. L. Pey, W.
K. Choi, S. Chattopadhyay, H. B. Zhao, E. A. Fitzgerald, D. A.
Antoniadis, and P. S. Lee, Journal of Vacuum Science and Technology
A 20, 1903 (2002). [1193 K, 8 pages]
|
|
|
1x2
optical waveguide filters based on multimode interference for 1.3- and
1.55-µm operation, B. Li, S.-J. Chua, C. W. Leitz, and Eugene
A. Fitzgerald, Optical Engineering 41, 723 (2002). [112
K, 5 pages]
|
|
|
Observation of memory
effect in germanium nanocrystals embedded in an amorphous silicon oxide
matrix of a metal-insulator-semiconductor structure, W. K. Choi, W.
K. Chim, C. L. Heng, L. W. Teo, V. Ho, V. Ng, D. A. Antoniadis, and E.
A. Fitzgerald, Applied Physics Letters 80, 2014 (2002).
[290 K, 3 pages]
|
2001
|
|
Relaxed
silicon-germanium on insulator substrate by layer transfer,
Zhiyuan Cheng, Gianni Taraschi, Matthew T. Currie, Chris W. Leitz,
Minjoo L. Lee, Arthur Pitera, Thomas A. Langdo, Judy L. Hoyt, Dimitri
A. Antoniadis, and Eugene A. Fitzgerald, Journal of Electronic
Materials 30, L37 (2001). [162 K, 3 pages]
|
|
|
Electron Mobility
Enhancement in Strained-Si n-MOSFETs Fabricated on SiGe-on-Insulator
(SGOI) Substrates, Zhiyuan Cheng, Matthew T. Currie, Chris
W. Leitz, Gianni Taraschi, Eugene A. Fitzgerald, Judy L. Hoyt, and
Dimitri A. Antoniadis, IEEE Electron Device Letters 22,
321 (2001). [130 K, 3 pages]
|
|
|
N2O
oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD,
C. S. Tan, W. K. Choi, L. K. Bera, K. L. Pey, D. A. Antoniadis, E. A.
Fitzgerald, M. T. Currie, and C. K. Maiti, Solid-State Electronics 45,
1945 (2001). [186 K, 5 pages]
|
|
|
Dislocation
Glide and Blocking Kinetics in Compositionally Graded
SiGe/Si, C.W. Leitz, M.T. Currie, A.Y. Kim, J. Lai, E. Robbins,
E.A. Fitzgerald and M.T. Bulsara, Journal of Applied Physics 90,
2730 (2001). [126 K, 7 pages] |
|
|
Strained
Ge Channel p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
Grown on Si1-xGex/Si Virtual Substrates, M.L.
Lee, C.W. Leitz, Z. Cheng, A.J. Pitera, T. Langdo, M.T. Currie, G.
Taraschi, D.A. Antoniadis, and E.A. Fitzgerald, Applied Physics
Letters 79, 3344 (2001). [176 K, 3 pages]
|
|
|
Hole
Mobility Enhancements in Strained Si/Si1-yGey
p-Type Metal-Oxide-Semiconductor Field-Effect Transistors Grown on
Relaxed Si1-xGex (x<y)
Virtual Substrates, C.W. Leitz, M.T. Currie, M.L. Lee, Z.-Y. Cheng,
D.A. Antoniadis, and E.A. Fitzgerald, Applied Physics Letters 79,
4246 (2001). [96 K, 3 pages] |
|
|
Carrier
Mobilities and Process Stability of Strained Si n- and
p-MOSFETs on SiGe Virtual Substrates, M.T. Currie, C.W. Leitz, T.A.
Langdo, G. Taraschi, D.A. Antoniadis, and E.A. Fitzgerald, Journal
of Vacuum Science and Technology B 19, 2268 (2001). [213 K,
12 pages] |
2000
|
|
Metal-organic
Chemical Vapor Deposition of Single Domain GaAs on Ge/GexSi1-x/Si
and Ge Substrates, S.M. Ting and E.A. Fitzgerald, Journal of
Applied Physics 85, 2618 (2000). [783 K, 11 pages]
|
|
|
Alternatives
to Thick MBE-grown Relaxed SiGe Buffers, T. Hackbarth,
H.-J. Herzog, M. Zeuner, G. Hock, E.A. Fitzgerald, M. Bulsara, C.
Rosenblad, and H. von Kanel, Thin Solid Films 369, 148
(2000). [287 K, 4 pages] |
1999
|
|
Dislocation Dynamics in Relaxed
Graded Composition Semiconductors, E. A. Fitzgerald, A. Y. Kim, M.
T. Currie, T. A. Langdo, G. Taraschi, and M. T. Bulsara, Materials
Science and Engineering B 67, 53 (1999). [265 K, 9 pages] |
|
|
Dislocations
in Relaxed SiGe/Si Heterostructures, E. A. Fitzgerald,
M. T. Currie, S. B. Samavedam, T. A. Langdo, G. Taraschi, V. Yang, C.
W. Leitz and M. T. Bulsara, Physica Status Solidi A 171,
227 (1999). [355 K, 12 pages] |
|
|
Evolution
of Microstructure and Dislocation Dynamics in InxGa1-xP
Graded Buffers Grown on GaP by Metalorganic Vapor Phase Epitaxy:
Engineering Device-quality Substrate Materials, A. Y. Kim, W. S.
McCullough, E. A. Fitzgerald, Journal of Vacuum Science and
Technology B 17, 1485 (1999). [1198 K, 17 pages]
|
1998
|
|
Graded
InxGa1-xAs/GaAs 1.3 µm Wavelength Light
Emitting Diode Structures Grown with Molecular Beam Epitaxy, M.T.
Bulsara, V. Yang, A. Thilderkvist, and E.A. Fitzgerald, Journal of
Applied Physics 83, 592 (1998). [4939 K, 8 pages]
|
|
|
Relaxed
InxGa1-xAs Graded Buffers Grown with
Organometallic Vapor Phase Epitaxy on GaAs, Mayank T. Bulsara,
Chris Leitz, and Eugene A. Fitzgerald, Applied Physics Letters 72,
1608 (1998). [1014 K, 3 pages] |
|
|
Controlling
Threading Dislocation Densities in Ge on Si Using Graded
SiGe Layers and Chemical-Mechanical Polishing, M. T. Currie, S. B.
Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Applied
Physics Letters 72, 1718 (1998). [328 K, 3 pages]
|
|
|
Anti-Phase
Domain-Free Growth of GaAs on Offcut (001) Ge Wafers by
Molecular Beam Epitaxy with Suppressed Ge Outdiffusion, R.M. Sieg,
S.A. Ringel, S.M. Ting, E.A. Fitzgerald, and R.N. Sacks, Journal of
Electronic Materials 27, 900 (1998). [516 K, 10 pages]
|
|
|
Scanning
Force Microscopy Studies of GaAs Films Grown on Offcut Ge Substrates,
Q. Xu, J.W.P. Hsu, S.M. Ting, E.A. Fitzgerald, R.M. Sieg, and S.A.
Ringel, Journal of Electronic Materials 27, 1010
(1998). [3023 K, 9 pages] |
|
|
High-Quality
Germanium Photodiodes Integrated on Silicon Substrates
Using Optimized Relaxed Graded Buffers, S. B. Samavedam, M. T.
Currie, T. A. Langdo, and E. A. Fitzgerald, Applied Physics Letters
73, 2125 (1998). [146 K, 3 pages]
|
1997
|
|
Novel
Dislocation Structure and Surface Morphology Effects in Relaxed
Ge/Si-Ge(Graded)/Si Structures., S.B. Samavedam and E.A.
Fitzgerald, Journal of Applied Physics 81, 3108 (1997).
[563 K, 9 pages] |
|
|
Influence
of Strain on Semiconductor Thin Film Epitaxy, E.A.
Fitzgerald, S. Samavedam, Y.H. Xie, and L.M. Giovane, Journal of
Vacuum Science and Technology A 15, 1048 (1997). [636 K, 9
pages] |
1994
|
|
Necessity
of Ga Pre-layers in GaAs/Ge Growth Using Gas-Source Molecular
Beam Epitaxy, E.A. Fitzgerald, J.M. Kuo, Y.-H. Xie, and P.J.
Silverman, Applied Physics Letters 64, 733 (1994).
[596 K, 3 pages] |
|
|
Semiconductor
Surface Roughness: Dependence on Sign and Magnitude of
Bulk Strain, Y.-H. Xie, G.H. Gilmer, C. Roland, P.J. Silverman,
S.K. Buratto, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, S. Schuppler,
M.A. Marcus, and P.H. Citrin, Physical Review Letters 72,
3006 (1994). [410 K, 4 pages] |
1993
1992
|
|
Relaxed
GexSi1-x Structures for III-V Integration
With Si and High Mobility Two-Dimensional Electron Gases in Si,
E.A. Fitzgerald, Y.-H. Xie, D. Monroe, P.J.Silverman, J.M. Kuo, A.R.
Kortan, F.A. Thiel, and B.E. Weir, Journal of Vacuum Science and
Technology B 10, 1807 (1992). [3167 K, 13 pages]
|
|
|
Quantized
Hall Effects in High-Electron-Mobility Si/Ge Structures,
D. Monroe, Y.-H. Xie, E.A. Fitzgerald, and P.J.Silverman, Physical
Review B 46, 7935 (1992). [298 K, 3 pages]
|
1991
|
|
Totally
Relaxed GexSi1-x Layers with Low
Threading Dislocation Densities Grown on Si Substrates, E.A.
Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel,
Y.-J. Mii, and B.E. Weir, Applied Physics Letters 59,
811 (1991). [480 K, 3 pages] |
Proceedings of Refereed Conferences
2003
|
|
SiGe-On-Insulator
(SGOI): Two Structures for CMOS Application, Z. Cheng, J. Jung, M.
L. Lee, H. Nayfeh, A. J. Pitera, J. L. Hoyt, E. A. Fitzgerald, and D.
A. Antoniadis, SMA Conference Proceedings (2003). [423 K, 7
pages] |
|
|
Hybrid valence bands in
strained-layer heterostructures grown on relaxed SiGe virtual substrates,
M. L. Lee and E. A. Fitzgerald, MRS Proceedings, Spring 2003.
[573 K, 6 pages] |
|
|
Ge MOS characteristics
with CVD HfO2 gate dielectrics and TaN gate electrode,
W. P. Bai, N. Lu, J. Liu, A. Ramirez, D. L. Kwong, D. Wristers, A.
Ritenour, L. Lee, and D. Antoniadis, 2003 Symposium on VLSI
Technology Digest of Technical Papers (2003). [ K, 2 pages] |
|
|
MOSFET channel
engineering using strained Si, SiGe, and Ge channels, E. A.
Fitzgerald, M. L. Lee, C. W. Leitz, and D. A. Antoniadis, ECS
Meeting Proceedings (2003). [481 K, 10 pages] |
2002
|
|
Yellow-green emission for
ETS-LEDs and lasers based on a strained-InGaP quantum well
heterostructure grown on a transparent, compositionally graded AlInGaP
buffer, L. McGill, J. Wu, and E. A. Fitzgerald, MRS Porceedings,
Fall 2002. [767 K, 10 pages]
|
|
|
Strained-Si-on-Insulator
(SGOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions,
G. Taraschi, A. J. Pitera, L. M. McGill, Z. Cheng, M. L. Lee, T. A.
Langdo, and E. A. Fitzgerald, Proceedings of Fall 2002 MRS Symposium,
Vol 745, 105 (2002).
|
|
|
SiGe-On-Insulator
(SGOI) Technology and MOSFET Fabrication, Z. Cheng, E. A.
Fitzgerald, and D. A. Antoniadis, SMA Conference Proceedings
(2002).
|
|
|
Strategies for direct
monolithic integration of AlxGa1-xAs/InxGa1-xAs
LEDs and lasers on Ge/GeSi/Si substrates via relaxed graded GexSi1-x
buffer layers, M. E. Groenert, C. W. Leitz, A. J. Pitera, V. K.
Yang, H. Lee, R. J. Ram, and E. A. Fitzgerald, Material Research
Society Symposium Proceedings, Vol. 692, (2002).
|
|
|
Preparation of Novel
SiGe-free strained Si on insulator substrates, T. A. Langdo, A.
Lochtefeld, M T. Currie, R. Hammond, V. K. Yang, C. J. Vineis, H.
Badawi, M. T. Bulsara, and E. A. Fitzgerald, IEEE SOI Conference
(2002). [265 K, 2 pages]
|
2001
|
|
Relaxed
SiGe-on-insulator fabricated via wafer bonding and layer transfer:
etch-back and smart-cut alternatives, Gianni Taraschi, Zhiyuan
Cheng, Matthew T. Currie, Chris W. Leitz, Thomas A. Langdo, Minjoo L.
Lee, Arthur Pitera, Eugene A. Fitzgerald, Judy L. Hoyt, and Dimitri. A.
Antoniadis, Proceedings of the Tenth International Symposium on
Silicon-on-Insulator Technology and Devices, Electrochem. Soc., 27,
(2001).
|
|
|
SiGe-on-insulator
(SGOI): substrate preparation and MOSFET fabrication for electron
mobility evaluation, Zhiyuan Cheng, M. T. Currie, C. W.
Leitz, G. Taraschi, A. Pitera, M. L. Lee, T. A. Langdo, J. L. Hoyt, D.
A. Antoniadis, and E. A. Fitzgerald , Proceedings of the 2001 IEEE International
SOI Conference. IEEE, 13 (2001). |
|
|
Silicon-Germanium on
Insulator (SGOI), Zhiyuan Cheng, Matthew T. Currie, Chris W. Leitz,
Gianni Taraschi, Arthur Pitera, Minjoo L. Lee, Thomas A. Langdo, Judy
L. Hoyt, Dimitri. A. Antoniadis, Eugene A. Fitzgerald, Material
Research Society Symposium Proceedings, Symposium A: Materials
Issues in Novel Si-Based Technology, Vol. 686, pp. A1.5.1-A1.5.6,
(2001).
|
|
|
Strained Ge channel p-type
MOSFETs fabricated on Si1-xGex virtual substrates,
M. L. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, G. Taraschi, D. A.
Antoniadis, and E. A. Fitzgerald, Material Research Society
Symposium Proceedings, Vol. 686, (2001).
|
|
|
Channel engineering of
SiGe-based heterostructures for high mobility MOSFETs, C. W. Leitz,
M. T. Currie, M. L. Lee, Z. Cheng, D. A. Antoniadis, and E. A.
Fitzgerald, Material Research Society Symposium Proceedings,
Vol. 686, (2001).
|
2000
|
|
III-V
Space Solar Cells on Si Substrates Using Graded GeSi Buffers,
S.A. Ringel, J.A. Carlin, C.W. Leitz, M. Currie, T. Langdo, E.A.
Fitzgerald, M. Bulsara, D.M. Wilt, and E.V. Clark, 16th European
Photovoltaics Solar Energy Conference and Exhibition (PVSECE),
Glasgow Scotland (May 1-5 2000). [91 K, 6 pages]
|
1998
|
|
Suppression
of Antiphase Disorder in GaAs Grown on Relaxed SiGe Buffers
by Metal-Organic Chemical Vapor Deposition, Ting, S.M., et al., MRS
Proceedings, Spring 1998. [623 K, 6 pages]
|
|
|
Engineering
Dislocation Dynamics in Inx(AlyGa1-y) 1-xP
Graded Buffers Grown on GaP by OMVPE,
Kim, A. and E. Fitzgerald, MRS Proceedings, Spring 1998. [622
K, 6 pages] |
|
|
Toward
Achieving Efficient III-V Space Cells on Ge/GeSi/Si Wafers,
S.M. Ringel, R.M. Sieg, J.A. Carlin, S. Ting, M. Currie, V. Yang, E.A.
Fitzgerald, M. Bulsara, and B.M. Keyes, Proceedings of the Second
World Conference and Exhibition on Photovoltaic Solar Energy Conversion,
July 1998. [395 K, 6 Pages] |
1997
1996
Revised:
09/1/08.
|
2008
|
|
Growth of highly
tensile-strained Ge on relaxed InxGa1-xAs by metal-organic chemical
vapor deposition, Yu Bai, Kenneth E. Lee, Chengwei Cheng, Minjoo L.
Lee, and Eugene A. Fitzgerald Journal of Applied Physics 104,
084518
(2008). [860 KB, 9 Pages]
|
|
|
In situ metal-organic
chemical vapor deposition atomic-layer deposition of aluminum oxide on
GaAs using trimethyaluminum and isopropanol precursors,
Cheng-Wei Cheng and Eugene A. Fitzgerald Appl. Phys. Lett. 93,
031902 (2008). [406 KB, 3 Pages]
|
2007
|
|
Relaxed,
high-quality InP on GaAs by using InGaAs and InGaP graded
buffers to avoid phase separation, Nathaniel J. Quitoriano and
Eugene A. Fitzgerald, Journal of Applied Physics 102
033511 (2007). [2.36MB, 17 pages] |
|
|
Alternative
slip system activation in lattice-mismatched InP/InGaAs
interfaces, Nathaniel J. Quitoriano and Eugene A. Fitzgerald, Journal
of Applied Physics 101 073509 (2007). [1.00MB, 10 pages] |
|
|
Monolithic
CMOS-compatible AlGaInP visible LED arrays on silicon on
lattice-engineered substrates (SOLES), Kamesh Chilukuri, Michael J
Mori, Carl L Dohrman, Eugene A Fitzgerald, Semiconductor Science
and Technology 22 29-34 (2007). [583K, 6 pages] |
|
|
Relaxed graded SiGe
donor substrates incorporating hydrogen-gettering
and buried etch stop layers for strained silicon layer transfer
applications, Isaacson, David M. Pitera, Arthur J. Fitzgerald,
Eugene A. Journal of Applied Physics 101 n 1 (2007).
|
2006
|
|
Fabrication of
silicon on lattice-engineered substrate (SOLES) as a
platform for monolithic integration of CMOS and optoelectronic devices,
Dohrman, Carl L. Chilukuri, Kamesh; Isaacson, David M.; Lee, Minjoo L.;
Fitzgerald, Eugene A. Materials Science and Engineering B:
Solid-State Materials for Advanced Technology v 135, n 3,
Dec 15,(2006). |
|
|
Deviations from ideal
nucleation-limited relaxation in high-Ge content
compositionally graded SiGe/Si, Isaacson, David M. Dohrman, Carl
L.; Fitzgerald, Eugene A.Journal of Vacuum Science and Technology B:
Microelectronics and Nanometer Structures v 24 n 6,
(2006). |
|
|
Microelectronically
fabricated LiCoO2/SiO 2/polycrystalline-silicon
power cells planarized by chemical mechanical polishing, Ariel,
Nava. Isaacson, David M. Fitzgerald, Eugene A.Journal of Vacuum
Science and Technology B: Microelectronics and Nanometer Structures
v 24 , n 2, March/April, (2006). |
|
|
Challenges
in epitaxial growth of SiGe buffers on Si (111), (110), and (112)
, Minjoo L. Lee, Dimitri A. Antoniadis, Eugene A. Fitzgerald, Thin
Solid Films 508 136-139 (2006). [225K, 4 pages] |
|
|
Strained-silicon on
silicon and strained-silicon
on silicon-germanium on silicon by relaxed
buffer bonding, David M. Isaacson, Gianni Taraschi, Arthur J.
Pitera, Nava Ariel,
Thomas A. Langdo, and Eugene A. Fitzgerald, Journal of The
Electrochemical Society 153 (2), G134-G140 (2006). [778 K,
7 pages] |
2005
|
|
Lattice-mismatch
and CMOS, Fitzgerald, E.A. 2005 International Semiconductor
Device Research Symposium, v 2005, 2005 International Semiconductor
Device Research Symposium, p 127-128, (2005). |
|
|
Improved thermal stability and hole
mobilities in a strained-Si/strained-Si1-yGey/strained-Si
heterostructure grown on a relaxed Si1-xGex buffer,
Saurabh Gupta, Minjoo L. Lee, David M. Isaacson and Eugene A.
Fitzgerald, Materials Science and Engineering B 124-125,
102 (2005). [277 K, 5 pages] |
|
|
Hydrogen gettering and strain-induced
platelet nucleation in tensilely strained Si0.4Ge0.6/Ge
for layer exfoliation applications,
Arthur J. Pitera and E. A. Fitzgerald, Journal of Applied Physics
97,
104511 (2005). [993 K, 11 pages] |
|
|
Electrochemically controlled transport
of lithium through ultrathin SiO2,
N. Ariel, G. Ceder, D. Sadoway, E. A. Fitzgerald, Journal of
Applied Physics 98,
023516 (2005). [351 K, 7 pages] |
|
|
Improved
hole mobilities and thermal stability in a strained-Si/strained-Si1-yGey/strained-Si
heterostructure grown on a relaxed Si1-xGex buffer,
S. Gupta, M. L. Lee, E. A. Fitzgerald, Applied Physics Letters 86,
192104 (2005). [105 K, 3 pages] |
|
|
Strained
Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor
field-effect
transistors, M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M.
T. Currie, A. Lochtefeld, Journal of Applied Physics 97
(1),
011101 (2005). [558 K, 28 pages] |
2004
|
|
Strained
Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication
techniques,
G. Taraschi, A. J. Pitera, and E. A. Fitzgerald, Solid-State
Electronics 48,
1297 (2004). [477 K, 9 pages] |
|
|
Hole
mobility enhancement in strained-Si/strained-SiGe heterostructure
p-MOSFETs
fabricated on SiGe-on-insulator (SGOI), Z. Cheng, J. Jung, M.
L. Lee, A. J. Pitera, J. L. Hoyt, D. A. Antoniadis, and E. A.
Fitzgerald, Semicond.
Sci. Technol. 19, L48 (2004). [81 K, 4 pages] |
|
|
Yellow-green strained-InGaP
quantum-well epitaxial-transparent-substrate light emitting diodes,
L. McGill, J. W. Wu, and E. A. Fitzgerald, Journal of Applied
Physics 95 (12), 7561 (2004). [539 K, 6 pages]
|
|
|
Coplanar integration of
lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si1–xGex/Si
virtual substrates, A. J. Pitera, G. Taraschi, M. L. Lee, C. W.
Leitz, Z.Y. Cheng, and E. A. Fitzgerald, Journal of the
Electrochemical Society 151 (7), G443 (2004). [664 K, 5
pages] |
|
|
Electron mobility
characteristics of n-channel metal-oxide-semiconductor
field-effect transistors fabricated on Ge-rich single- and dual-channel
SiGe heterostructures, M.L. Lee and E. A. Fitzgerald, Journal
of Applied Physics 95 (3), 1550 (2004). [112 K, 6 pages]
|
|
|
Growth of strained Si
and strained Ge heterostructures on relaxed Si1–xGex
by ultrahigh vacuum chemical vapor deposition, M.L. Lee, A. J.
Pitera, and E. A. Fitzgerald, Journal of Vacuum Science &
Technology B 22 (1), 158 (2004). [328 K, 7 pages]
|
|
|
Ultrathin strained
Si-on-insulator and SiGe-on-insulator created using low temperature
wafer bonding and metastable stop layers,
G. Taraschi, A. J. Pitera, L. M. McGill, Z. Cheng, M.L. Lee, T. A.
Langdo, and E. A. Fitzgerald, Journal of the Electrochemical Society 151
(1), G47-56 (2004). [1350 K, 10 pages] |
2003
|
|
SiGe-free strained Si
on insulator by wafer bonding and layer transfer, T. A. Langdo, M
T. Currie, A. Lochtefeld, R. Hammond, J. A. Carlin, M. Erdtmann, G.
Braithwaite, V. K. Yang, C. J. Vineis, H. Badawi, and M. T. Bulsara, Applied
Physics Letters 82, 4256 (2003). [116 K, 3 pages]
|
|
|
Strained Si/strained Ge
dual-channel heterostructures on relaxed Si0.5Ge0.5
for symmetric mobility p-type and n-type
metal-oxide-semiconductor field-effect transistors, M.L. Lee and E.
A. Fitzgerald, Applied Physics Letters 83 (20), 4202
(2003). [192 K, 3 pages] |
|
|
Comparison of
luminescent efficiency of InGaAs quantum well structures grown on Si,
GaAs, Ge, and SiGe virtual substrate, V. K. Yang, S. M. Ting, M. E.
Groenert, M. T. Bulsara, M. T. Currie, C. W. Leitz, and Eugene A.
Fitzgerald, Journal of Applied Physics 93, 5095 (2003).
[324 K, 8 pages] |
|
|
Nanostructure and
infrared photoluminescence of nanocrystalline Ge formed by reduction of
Si0.75Ge0.25O2/Si0.75Ge0.25
using various H2 pressures, Gianni Tarschi, Sajan Saini, Wendy W. Fan,
Lionel C. Kimerling, and Eugene A. Fitzgerald, Journal of Applied
Physics 93, 9988.
[798 K, 3 pages] |
|
|
Crack formation in GaAs
heteroepitaxial films on Si and SiGe virtual substrates, V. K.
Yang, M. E. Groenert, C. W. Leitz, A. J. Pitera, M. T. Currie, and
Eugene A. Fitzgerald, Journal of Applied Physics 93,
3859 (2003). [345 K, 7 pages] |
|
|
Hole mobility enhancements
in nanometer-scale strained-silicon heterostructures grown on Ge-rich
relaxed Si1-xGex, Minjoo L. Lee and Eugene A. Fitzgerald, Journal
of Applied Physics 94 2590 (2003). [193 K, 7
pages] |
|
|
Monolithic integration
of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed
graded GeSi buffer layers, Michael E. Groenert, Christopher W. Leitz,
Arthur J. Pitera, and Vicky Yang, Journal of Applied Physics 93
362 (2003). [498 K, 6 pages] |
|
|
Strain relaxation in
graded InGaN/GaN epilayers grown on sapphire, T. L. Song, S. J.
Chua, E. A. Fitzgerald, P. Chen, and S. Tripathy, Applied Physics
Letters 83, 1545 (2003). [58 K, 3 pages] |
|
|
Improved
room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs
lasers fabricated on Si substrates via relaxed graded GexSi1-x
buffer layers, M. E. Groenert, A. J. Pitera, R. J. Ram, and E. A.
Fitzgerald, Journal of Vacuum Science and Technology B 21,
1064 (2003). [540 K, 6 pages] |
|
|
Implementation of both
high-hole and electron mobility in strained Si/strained Si1-yGey
on relaxed Si1-xGex (x<y) virtual substrate,
J. Jung, M. L. Lee, S. Yu, E. A. Fitzgerald, and D. A. Antoniadis, IEEE
Electron Device Letters 24, 460 (2003). [304 K, 3 pages]
|
|
|
Effect of rapid thermal
annealing on strain in ultrathin strained silicon on insulator layers,
T. S. Drake, C. Ni Chleirigh, M. L. Lee, A. J. Pitera, Eugene A.
Fitzgerald, Dimitri A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N.
Klymko, and J. L. Hoyt, Applied Physics Letters 83, 875
(2003). [314 K, 3 pages] |
|
|
Theoretical
analysis of Si1-x-yGexCy near-infrared
photodetectors, B. Li, S.-J. Chua, and Eugene A. Fitzgerald, Optical
Engineering 42, 1993 (2003). [160 K, 7 pages]
|
|
|
Influence
of high channel doping on the inversion layer electron
mobility in strained silicon n-MOSFETs, H. M. Nayfeh, C. W. Leitz,
A. J. Pitera, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadis, IEEE
Electron Device Letters 24, 248 (2003). [297 K, 3 pages]
|
2002
|
|
Relaxed
SiGe-on-insulator fabricated via wafer bonding and etch back,
Gianni Taraschi, Thomas A. Langdo, Matthew T. Currie, Eugene A.
Fitzgerald, and Dimitri A. Antoniadis, Journal of Vacuum Science
& Technology B 20, 725 (2002). [849 K, 3 pages]
|
|
|
Hole mobility
enhancements and alloy scattering-limited mobility in tensile strained
Si/SiGe surface channel metal-oxide-semiconductor field-effect
transisitors, C. W. Leitz, TM. L. Lee, Z.-Y. Cheng, Dimitri A.
Antoniadis, and Eugene A. Fitzgerald, Journal of Applied
Physics 92, 3745 (2002). [99 K, 7 pages]
|
|
|
Monolithic
integration of III-V optical interconnects on Si using SiGe virtual
substrates, V. K. Yang, M. E. Groenert, G. Taraschi, C. W. Leitz,
A. J. Pitera, M. T. Currie, Z. Cheng, and E. A. Fitzgerald, Journal
of Materials Science: Materials in Electronics 13, 377
(2002). [497 K, 4 pages]
|
|
|
Interfacial reactions of
Ni on Si1-xGex (x= 0.2, 0.3) at low temperature
by rapid thermal annealing, H. B. Zhao, K. L. Pey, W. K. Choi, S.
Chattopadhyay, E. A. Fitzgerald, D. A. Antoniadis, and P. S. Lee,
Journal of Applied Physics 92, 214 (2002). [163 K, 4 pages]
|
|
|
Comparison of arsenic
and phosphorus diffusion behavior in silicon-germanium alloys, S.
Eguchi, J. L. Hoyt, C. W. Leitz, and E. A. Fitzgerald, Applied
Physics Letters 80, 1743 (2002). [48 K, 3 pages]
|
|
|
Thermal reaction of
nickel and Si0.75Ge0.25 alloy, K. L. Pey, W.
K. Choi, S. Chattopadhyay, H. B. Zhao, E. A. Fitzgerald, D. A.
Antoniadis, and P. S. Lee, Journal of Vacuum Science and Technology
A 20, 1903 (2002). [1193 K, 8 pages]
|
|
|
1x2
optical waveguide filters based on multimode interference for 1.3- and
1.55-µm operation, B. Li, S.-J. Chua, C. W. Leitz, and Eugene
A. Fitzgerald, Optical Engineering 41, 723 (2002). [112
K, 5 pages]
|
|
|
Observation of memory
effect in germanium nanocrystals embedded in an amorphous silicon oxide
matrix of a metal-insulator-semiconductor structure, W. K. Choi, W.
K. Chim, C. L. Heng, L. W. Teo, V. Ho, V. Ng, D. A. Antoniadis, and E.
A. Fitzgerald, Applied Physics Letters 80, 2014 (2002).
[290 K, 3 pages]
|
2001
|
|
Relaxed
silicon-germanium on insulator substrate by layer transfer,
Zhiyuan Cheng, Gianni Taraschi, Matthew T. Currie, Chris W. Leitz,
Minjoo L. Lee, Arthur Pitera, Thomas A. Langdo, Judy L. Hoyt, Dimitri
A. Antoniadis, and Eugene A. Fitzgerald, Journal of Electronic
Materials 30, L37 (2001). [162 K, 3 pages]
|
|
|
Electron Mobility
Enhancement in Strained-Si n-MOSFETs Fabricated on SiGe-on-Insulator
(SGOI) Substrates, Zhiyuan Cheng, Matthew T. Currie, Chris
W. Leitz, Gianni Taraschi, Eugene A. Fitzgerald, Judy L. Hoyt, and
Dimitri A. Antoniadis, IEEE Electron Device Letters 22,
321 (2001). [130 K, 3 pages]
|
|
|
N2O
oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD,
C. S. Tan, W. K. Choi, L. K. Bera, K. L. Pey, D. A. Antoniadis, E. A.
Fitzgerald, M. T. Currie, and C. K. Maiti, Solid-State Electronics 45,
1945 (2001). [186 K, 5 pages]
|
|
|
Dislocation
Glide and Blocking Kinetics in Compositionally Graded
SiGe/Si, C.W. Leitz, M.T. Currie, A.Y. Kim, J. Lai, E. Robbins,
E.A. Fitzgerald and M.T. Bulsara, Journal of Applied Physics 90,
2730 (2001). [126 K, 7 pages] |
|
|
Strained
Ge Channel p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
Grown on Si1-xGex/Si Virtual Substrates, M.L.
Lee, C.W. Leitz, Z. Cheng, A.J. Pitera, T. Langdo, M.T. Currie, G.
Taraschi, D.A. Antoniadis, and E.A. Fitzgerald, Applied Physics
Letters 79, 3344 (2001). [176 K, 3 pages]
|
|
|
Hole
Mobility Enhancements in Strained Si/Si1-yGey
p-Type Metal-Oxide-Semiconductor Field-Effect Transistors Grown on
Relaxed Si1-xGex (x<y)
Virtual Substrates, C.W. Leitz, M.T. Currie, M.L. Lee, Z.-Y. Cheng,
D.A. Antoniadis, and E.A. Fitzgerald, Applied Physics Letters 79,
4246 (2001). [96 K, 3 pages] |
|
|
Carrier
Mobilities and Process Stability of Strained Si n- and
p-MOSFETs on SiGe Virtual Substrates, M.T. Currie, C.W. Leitz, T.A.
Langdo, G. Taraschi, D.A. Antoniadis, and E.A. Fitzgerald, Journal
of Vacuum Science and Technology B 19, 2268 (2001). [213 K,
12 pages] |
2000
|
|
Metal-organic
Chemical Vapor Deposition of Single Domain GaAs on Ge/GexSi1-x/Si
and Ge Substrates, S.M. Ting and E.A. Fitzgerald, Journal of
Applied Physics 85, 2618 (2000). [783 K, 11 pages]
|
|
|
Alternatives
to Thick MBE-grown Relaxed SiGe Buffers, T. Hackbarth,
H.-J. Herzog, M. Zeuner, G. Hock, E.A. Fitzgerald, M. Bulsara, C.
Rosenblad, and H. von Kanel, Thin Solid Films 369, 148
(2000). [287 K, 4 pages] |
1999
|
|
Dislocation Dynamics in Relaxed
Graded Composition Semiconductors, E. A. Fitzgerald, A. Y. Kim, M.
T. Currie, T. A. Langdo, G. Taraschi, and M. T. Bulsara, Materials
Science and Engineering B 67, 53 (1999). [265 K, 9 pages] |
|
|
Dislocations
in Relaxed SiGe/Si Heterostructures, E. A. Fitzgerald,
M. T. Currie, S. B. Samavedam, T. A. Langdo, G. Taraschi, V. Yang, C.
W. Leitz and M. T. Bulsara, Physica Status Solidi A 171,
227 (1999). [355 K, 12 pages] |
|
|
Evolution
of Microstructure and Dislocation Dynamics in InxGa1-xP
Graded Buffers Grown on GaP by Metalorganic Vapor Phase Epitaxy:
Engineering Device-quality Substrate Materials, A. Y. Kim, W. S.
McCullough, E. A. Fitzgerald, Journal of Vacuum Science and
Technology B 17, 1485 (1999). [1198 K, 17 pages]
|
1998
|
|
Graded
InxGa1-xAs/GaAs 1.3 µm Wavelength Light
Emitting Diode Structures Grown with Molecular Beam Epitaxy, M.T.
Bulsara, V. Yang, A. Thilderkvist, and E.A. Fitzgerald, Journal of
Applied Physics 83, 592 (1998). [4939 K, 8 pages]
|
|
|
Relaxed
InxGa1-xAs Graded Buffers Grown with
Organometallic Vapor Phase Epitaxy on GaAs, Mayank T. Bulsara,
Chris Leitz, and Eugene A. Fitzgerald, Applied Physics Letters 72,
1608 (1998). [1014 K, 3 pages] |
|
|
Controlling
Threading Dislocation Densities in Ge on Si Using Graded
SiGe Layers and Chemical-Mechanical Polishing, M. T. Currie, S. B.
Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Applied
Physics Letters 72, 1718 (1998). [328 K, 3 pages]
|
|
|
Anti-Phase
Domain-Free Growth of GaAs on Offcut (001) Ge Wafers by
Molecular Beam Epitaxy with Suppressed Ge Outdiffusion, R.M. Sieg,
S.A. Ringel, S.M. Ting, E.A. Fitzgerald, and R.N. Sacks, Journal of
Electronic Materials 27, 900 (1998). [516 K, 10 pages]
|
|
|
Scanning
Force Microscopy Studies of GaAs Films Grown on Offcut Ge Substrates,
Q. Xu, J.W.P. Hsu, S.M. Ting, E.A. Fitzgerald, R.M. Sieg, and S.A.
Ringel, Journal of Electronic Materials 27, 1010
(1998). [3023 K, 9 pages] |
|
|
High-Quality
Germanium Photodiodes Integrated on Silicon Substrates
Using Optimized Relaxed Graded Buffers, S. B. Samavedam, M. T.
Currie, T. A. Langdo, and E. A. Fitzgerald, Applied Physics Letters
73, 2125 (1998). [146 K, 3 pages]
|
1997
|
|
Novel
Dislocation Structure and Surface Morphology Effects in Relaxed
Ge/Si-Ge(Graded)/Si Structures., S.B. Samavedam and E.A.
Fitzgerald, Journal of Applied Physics 81, 3108 (1997).
[563 K, 9 pages] |
|
|
Influence
of Strain on Semiconductor Thin Film Epitaxy, E.A.
Fitzgerald, S. Samavedam, Y.H. Xie, and L.M. Giovane, Journal of
Vacuum Science and Technology A 15, 1048 (1997). [636 K, 9
pages] |
1994
|
|
Necessity
of Ga Pre-layers in GaAs/Ge Growth Using Gas-Source Molecular
Beam Epitaxy, E.A. Fitzgerald, J.M. Kuo, Y.-H. Xie, and P.J.
Silverman, Applied Physics Letters 64, 733 (1994).
[596 K, 3 pages] |
|
|
Semiconductor
Surface Roughness: Dependence on Sign and Magnitude of
Bulk Strain, Y.-H. Xie, G.H. Gilmer, C. Roland, P.J. Silverman,
S.K. Buratto, J.Y. Cheng, E.A. Fitzgerald, A.R. Kortan, S. Schuppler,
M.A. Marcus, and P.H. Citrin, Physical Review Letters 72,
3006 (1994). [410 K, 4 pages] |
1993
1992
|
|
Relaxed
GexSi1-x Structures for III-V Integration
With Si and High Mobility Two-Dimensional Electron Gases in Si,
E.A. Fitzgerald, Y.-H. Xie, D. Monroe, P.J.Silverman, J.M. Kuo, A.R.
Kortan, F.A. Thiel, and B.E. Weir, Journal of Vacuum Science and
Technology B 10, 1807 (1992). [3167 K, 13 pages]
|
|
|
Quantized
Hall Effects in High-Electron-Mobility Si/Ge Structures,
D. Monroe, Y.-H. Xie, E.A. Fitzgerald, and P.J.Silverman, Physical
Review B 46, 7935 (1992). [298 K, 3 pages]
|
1991
|
|
Totally
Relaxed GexSi1-x Layers with Low
Threading Dislocation Densities Grown on Si Substrates, E.A.
Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel,
Y.-J. Mii, and B.E. Weir, Applied Physics Letters 59,
811 (1991). [480 K, 3 pages] |
Proceedings of Refereed Conferences
2003
|
|
SiGe-On-Insulator
(SGOI): Two Structures for CMOS Application, Z. Cheng, J. Jung, M.
L. Lee, H. Nayfeh, A. J. Pitera, J. L. Hoyt, E. A. Fitzgerald, and D.
A. Antoniadis, SMA Conference Proceedings (2003). [423 K, 7
pages] |
|
|
Hybrid valence bands in
strained-layer heterostructures grown on relaxed SiGe virtual substrates,
M. L. Lee and E. A. Fitzgerald, MRS Proceedings, Spring 2003.
[573 K, 6 pages] |
|
|
Ge MOS characteristics
with CVD HfO2 gate dielectrics and TaN gate electrode,
W. P. Bai, N. Lu, J. Liu, A. Ramirez, D. L. Kwong, D. Wristers, A.
Ritenour, L. Lee, and D. Antoniadis, 2003 Symposium on VLSI
Technology Digest of Technical Papers (2003). [ K, 2 pages] |
|
|
MOSFET channel
engineering using strained Si, SiGe, and Ge channels, E. A.
Fitzgerald, M. L. Lee, C. W. Leitz, and D. A. Antoniadis, ECS
Meeting Proceedings (2003). [481 K, 10 pages] |
2002
|
|
Yellow-green emission for
ETS-LEDs and lasers based on a strained-InGaP quantum well
heterostructure grown on a transparent, compositionally graded AlInGaP
buffer, L. McGill, J. Wu, and E. A. Fitzgerald, MRS Porceedings,
Fall 2002. [767 K, 10 pages]
|
|
|
Strained-Si-on-Insulator
(SGOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions,
G. Taraschi, A. J. Pitera, L. M. McGill, Z. Cheng, M. L. Lee, T. A.
Langdo, and E. A. Fitzgerald, Proceedings of Fall 2002 MRS Symposium,
Vol 745, 105 (2002).
|
|
|
SiGe-On-Insulator
(SGOI) Technology and MOSFET Fabrication, Z. Cheng, E. A.
Fitzgerald, and D. A. Antoniadis, SMA Conference Proceedings
(2002).
|
|
|
Strategies for direct
monolithic integration of AlxGa1-xAs/InxGa1-xAs
LEDs and lasers on Ge/GeSi/Si substrates via relaxed graded GexSi1-x
buffer layers, M. E. Groenert, C. W. Leitz, A. J. Pitera, V. K.
Yang, H. Lee, R. J. Ram, and E. A. Fitzgerald, Material Research
Society Symposium Proceedings, Vol. 692, (2002).
|
|
|
Preparation of Novel
SiGe-free strained Si on insulator substrates, T. A. Langdo, A.
Lochtefeld, M T. Currie, R. Hammond, V. K. Yang, C. J. Vineis, H.
Badawi, M. T. Bulsara, and E. A. Fitzgerald, IEEE SOI Conference
(2002). [265 K, 2 pages]
|
2001
|
|
Relaxed
SiGe-on-insulator fabricated via wafer bonding and layer transfer:
etch-back and smart-cut alternatives, Gianni Taraschi, Zhiyuan
Cheng, Matthew T. Currie, Chris W. Leitz, Thomas A. Langdo, Minjoo L.
Lee, Arthur Pitera, Eugene A. Fitzgerald, Judy L. Hoyt, and Dimitri. A.
Antoniadis, Proceedings of the Tenth International Symposium on
Silicon-on-Insulator Technology and Devices, Electrochem. Soc., 27,
(2001).
|
|
|
SiGe-on-insulator
(SGOI): substrate preparation and MOSFET fabrication for electron
mobility evaluation, Zhiyuan Cheng, M. T. Currie, C. W.
Leitz, G. Taraschi, A. Pitera, M. L. Lee, T. A. Langdo, J. L. Hoyt, D.
A. Antoniadis, and E. A. Fitzgerald , Proceedings of the 2001 IEEE International
SOI Conference. IEEE, 13 (2001). |
|
|
Silicon-Germanium on
Insulator (SGOI), Zhiyuan Cheng, Matthew T. Currie, Chris W. Leitz,
Gianni Taraschi, Arthur Pitera, Minjoo L. Lee, Thomas A. Langdo, Judy
L. Hoyt, Dimitri. A. Antoniadis, Eugene A. Fitzgerald, Material
Research Society Symposium Proceedings, Symposium A: Materials
Issues in Novel Si-Based Technology, Vol. 686, pp. A1.5.1-A1.5.6,
(2001).
|
|
|
Strained Ge channel p-type
MOSFETs fabricated on Si1-xGex virtual substrates,
M. L. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, G. Taraschi, D. A.
Antoniadis, and E. A. Fitzgerald, Material Research Society
Symposium Proceedings, Vol. 686, (2001).
|
|
|
Channel engineering of
SiGe-based heterostructures for high mobility MOSFETs, C. W. Leitz,
M. T. Currie, M. L. Lee, Z. Cheng, D. A. Antoniadis, and E. A.
Fitzgerald, Material Research Society Symposium Proceedings,
Vol. 686, (2001).
|
2000
|
|
III-V
Space Solar Cells on Si Substrates Using Graded GeSi Buffers,
S.A. Ringel, J.A. Carlin, C.W. Leitz, M. Currie, T. Langdo, E.A.
Fitzgerald, M. Bulsara, D.M. Wilt, and E.V. Clark, 16th European
Photovoltaics Solar Energy Conference and Exhibition (PVSECE),
Glasgow Scotland (May 1-5 2000). [91 K, 6 pages]
|
1998
|
|
Suppression
of Antiphase Disorder in GaAs Grown on Relaxed SiGe Buffers
by Metal-Organic Chemical Vapor Deposition, Ting, S.M., et al., MRS
Proceedings, Spring 1998. [623 K, 6 pages]
|
|
|
Engineering
Dislocation Dynamics in Inx(AlyGa1-y) 1-xP
Graded Buffers Grown on GaP by OMVPE,
Kim, A. and E. Fitzgerald, MRS Proceedings, Spring 1998. [622
K, 6 pages] |
|
|
Toward
Achieving Efficient III-V Space Cells on Ge/GeSi/Si Wafers,
S.M. Ringel, R.M. Sieg, J.A. Carlin, S. Ting, M. Currie, V. Yang, E.A.
Fitzgerald, M. Bulsara, and B.M. Keyes, Proceedings of the Second
World Conference and Exhibition on Photovoltaic Solar Energy Conversion,
July 1998. [395 K, 6 Pages] |
1997
1996
Revised:
09/1/08.
|
